HGT1S2N120BNS Datasheet, Igbt, Intersil Corporation

✔ HGT1S2N120BNS Features

of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal f

operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor contro

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HGT1S2N120BNS

Intersil Corporation

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12a/ 1200v/ npt series n-channel igbt.

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