Part number:
HGT1S2N120BNS
Manufacturer:
Intersil Corporation
File Size:
85.66 KB
Description:
12a/ 1200v/ npt series n-channel igbt.
HGT1S2N120BNS_IntersilCorporation.pdf
Datasheet Details
HGT1S2N120BNS Features
* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as:
HGT1S2N120BNS_IntersilCorporation.pdf
Datasheet Details
HGT1S2N120BNS
Intersil Corporation
85.66 KB
12a/ 1200v/ npt series n-channel igbt.
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