HGT1S2N120CNS Datasheet, Igbt, Fairchild Semiconductor

HGT1S2N120CNS Features

• Igbt of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal for many high vo

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HGT1S2N120CNS

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Fairchild Semiconductor

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📄 Datasheet

Description:

13a/ 1200v/ npt series n-channel igbt.

HGT1S2N120CNS Application

• Applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and driv

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HGT1S2N120CNS

Fairchild Semiconductor

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