HGT1S2N120BNDS Datasheet, Diode, Intersil Corporation

HGT1S2N120BNDS Features

• Diode of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT used is the development t

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HGT1S2N120BNDS

Manufacturer:

Intersil Corporation

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87.43kb

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📄 Datasheet

Description:

12a/ 1200v/ npt series n-channel igbt with anti-parallel hyperfast diode.

HGT1S2N120BNDS Application

• Applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and driv

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