Part number:
HGT1S2N120BNDS
Manufacturer:
Intersil Corporation
File Size:
87.43 KB
Description:
12a 1200v npt series n-channel igbt.
HGT1S2N120BNDS_IntersilCorporation.pdf
Datasheet Details
HGT1S2N120BNDS_IntersilCorporation.pdf
Datasheet Details
Part number:
HGT1S2N120BNDS
Manufacturer:
Intersil Corporation
File Size:
87.43 KB
Description:
12a 1200v npt series n-channel igbt.
HGT1S2N120BNDS, 12A 1200V NPT Series N-Channel IGBT
HGT1S2N120BNDS Features
* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT used is the development type TA49312. The Diode used is the development type TA49056. The IGBT is ideal for many high voltage switching appl
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