Datasheet Specifications
- Part number
- HGT1S2N120BNDS
- Manufacturer
- Intersil Corporation
- File Size
- 87.43 KB
- Datasheet
- HGT1S2N120BNDS_IntersilCorporation.pdf
- Description
- 12A 1200V NPT Series N-Channel IGBT
Description
HGTP2N120BND, HGT1S2N120BNDS Data Sheet January 2000 File Number 4698.2 12A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The .
Features
* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT used is the development type TA49312. The Diode used is the development type TA49056. The IGBT is ideal for many high voltage switching applHGT1S2N120BNDS Distributors
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