HGT1S2N120BNDS - 12A 1200V NPT Series N-Channel IGBT

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Intersil Corporation

Part number	HGT1S2N120BNDS
Manufacturer	Intersil Corporation
File Size	87.43 KB
Description	12A 1200V NPT Series N-Channel IGBT
Datasheet	HGT1S2N120BNDS Datasheet
Additional preview pages of the HGT1S2N120BNDS datasheet.

of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT used is the development type TA49312. The Diode used is the development type TA49056. The IGBT is ideal for many high voltage switching.

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Published: Mar 23, 2005 |