HGT1S2N120CNDS Datasheet, Diodes, Intersil Corporation

HGT1S2N120CNDS Features

• Diodes of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT used is the development t

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HGT1S2N120CNDS

Manufacturer:

Intersil Corporation

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92.96kb

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📄 Datasheet

Description:

13a/ 1200v/ npt series n-channel igbts with anti-parallel hyperfast diodes.

HGT1S2N120CNDS Application

• Applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and driv

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