Part number:
HGT1S2N120CNDS
Manufacturer:
Intersil Corporation
File Size:
92.96 KB
Description:
13a 1200v npt series n-channel igbt.
HGT1S2N120CNDS_IntersilCorporation.pdf
Datasheet Details
HGT1S2N120CNDS_IntersilCorporation.pdf
Datasheet Details
Part number:
HGT1S2N120CNDS
Manufacturer:
Intersil Corporation
File Size:
92.96 KB
Description:
13a 1200v npt series n-channel igbt.
HGT1S2N120CNDS, 13A 1200V NPT Series N-Channel IGBT
HGT1S2N120CNDS Features
* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT used is the development type TA49313. The Diode used is the development type TA49056 (Part number RHRD4120). The IGBT is ideal for many high
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