Datasheet Specifications
- Part number
- HGT1S2N120CNDS
- Manufacturer
- Intersil Corporation
- File Size
- 92.96 KB
- Datasheet
- HGT1S2N120CNDS_IntersilCorporation.pdf
- Description
- 13A 1200V NPT Series N-Channel IGBT
Description
HGTP2N120CND, HGT1S2N120CNDS Data Sheet January 2000 File Number 4681.2 13A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes Th.
Features
* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT used is the development type TA49313. The Diode used is the development type TA49056 (Part number RHRD4120). The IGBT is ideal for many highHGT1S2N120CNDS Distributors
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