4606 Datasheet | Specifications & PDF Download

Shenzhen Tuofeng Semiconductor Technology co., LTD 4606 Complementary High Density Trench MOSFET PRODUCT SUMMARY (N-Channel) VDSS ID RDS(on) (m-ohm

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AO4606 30V Complementary MOSFET General Description The AO4606 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate char

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AP4606B 30V N+P-Channel Enhancement Mode MOSFET Description The AP4606B uses advanced trench technology to provide excellent RDS(ON), low gate charge

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Features ·Low On resistance. ·+4.5V drive. ·RoHS compliant. Si460N6+P Complementary Enhancement MOSFET Si4606 Package Dimensions Specifications Abs

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sales.Mr.wang13826508770 www.sztssd.com SOP-8 Plastic-Encapsulate MOSFETS 4606 N and P-Channel Enhancement Mode Power MOSFET Description The 4606 us

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www.vishay.com SiR4606DP Vishay Siliconix N-Channel 60 V (D-S) MOSFET PowerPAK® SO-8 Single D D8 D7 D6 5 6.15 mm 1 Top View 5.15 mm PRODUCT SUMM

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FEATURES n Complete Low EMI Switch Mode Power Supply n Wide Input Voltage Range: 4.5V to 28V n 6A DC Typical, 8A Peak Output Current n 0.6V to 5V Outp

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STC4606 N&P Pair Enhancement Mode MOSFET 6.5A / -6.9A DESCRIPTION The STC4606 is the N & P-Channel enhancement mode power field effect transistor usi

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N and P Channel Enhancement Mode Power MOSFET Description The PE4606 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

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General Description ● Low gate charge. ● Use as a load switch. ● Use in PWM applications SWK4606 30V Complementary Enhancement-Mode MOSFET Product

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MT4606 September 2008 MT4606 Dual N & P-Channel PowerTrench MOSFET General Description These dual N- and P-Channel enhancement mode power field ef

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DATA SHEET CLA4606-085LF: Surface-Mount Limiter Diode Applications  Low-loss, high-power limiters  Receiver protectors Anode (Pin 1) Anode (Pin 3

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N- and P-Channel 30 V (D-S) MOSFET DTM4606 www.din-tek.jp PRODUCT SUMMARY N-Channel P-Channel VDS (V) 30 - 30 RDS(on) (Ω) 0.024 at V GS = 10 V 0.

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UNISONIC TECHNOLOGIES CO., LTD UD4606 DUAL ENHANCEMENT MODE (N-CHANNEL/P-CHANNEL) Power MOSFET  DESCRIPTION The UTC UD4606 provides excellent RDS(O

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SHEN ZHEN FINE MAD ELECTRONICS GROUP CO., LTD. TC4606(：S&CIC1267) MOSFET(N-P ) N 20V/7A RDS(ON)=12mΩ（typ.）@VGS=4.5V RDS(ON)=17mΩ（typ.）@VGS=2.5V

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LPC546xx 32-bit ARM Cortex-M4 microcontroller; up to 512 KB flash and 200 kB SRAM; High-speed USB device/host + PHY; Full-speed USB device/host; Ethe

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VRM = 600 V, IF(AV) = 60 A, trr = 100 ns(max.) Fast Recovery and High Power Diode CTNS-4606S Features The CTNS-4606S is a high power diode of the low

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MIC4606 85V Full-Bridge MOSFET Drivers with Adaptive Dead Time and Shoot-Through Protection Features • 5.5V to 16V Gate Drive Supply Voltage Range •

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