48-CHANNEL Datasheet | Specifications & PDF Download

Philips Semiconductors Product specification N-channel enhancement mode TrenchMOSTM transistor GENERAL DESCRIPTION N-channel enhancement mode standa

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AO4801A 30V P-Channel MOSFET General Description Product Summary The AO4801A combines advanced trench MOSFET technology with a low resistance packa

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Chipstar Mciroelectronics Chipstar Micro-electronics CS4863 AB CS4863 ， 5.0V ；THD+N 1.0％，4Ω 2.2W 3Ω2.5Ｗ 。，， 。 CS4863 ，， ，。 CS4863

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AO4800 Dual N-Channel 30-V (D-S) MOSFET www.VBsemi.tw PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.022 at VGS = 10 V 30 0.026 at VGS = 4.5 V ID (A) 6.

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APM9948K Dual N-Channel Enhancement Mode MOSFET Features • 60V/4A, R DS(ON) = 60mΩ(typ.) @ V GS = 10V R DS(ON) = 72mΩ(typ.) @ V GS =

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N-Channel 30-V(D-S) MOSFET GENERAL DESCRIPTION The ME4894 is the N-Channel logic enhancement mode power field effect transistors are produced using hi

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N-Channel Trench Power MOSFET General Description The 48N75 is N-channel MOS Field Effect Transistor designed for high current switching applications.

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AOZ1948 Single Channel LED Driver IC General Description The AOZ1948 is a high-efficiency Buck controller for general purpose high voltage and low vo

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRLB8748，IIRLB8748 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤4.8mΩ ·Enhancement

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2483 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2483 is N-Channel MOS Field Effe

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Si4800BDY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 0.0185 at VGS = 10 V 0.030 at VGS

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isc N-Channel MOSFET Transistor 2SK2848 FEATURES ·Drain Current –ID= 3A@ TC=25℃ ·Drain Source Voltage- : VDSS= 450V(Min) ·Static Drain-Source On-Res

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P-Channel Enhancement Mode Field Effect Transistor FEATURES -40V, -4.2A, RDS(ON) = 66mΩ @VGS = -10V. RDS(ON) = 105mΩ @VGS = -4.5V. Super high dense ce

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AO4813 30V Dual P-Channel MOSFET General Description Product Summary The AO4813 combines advanced trench MOSFET technology with a low resistance pa

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Datasheet Boost 1channel white LED driver For large LCDs BD9488F ●General Description BD9488F is a high efficiency driver for white LEDs and designed

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N-Channel 30-V(D-S) MOSFET GENERAL DESCRIPTION The ME4856 is the N-Channel logic enhancement mode power field effect transistors are produced using hi

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2487 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2487 is N-Channel MOS Field Effe

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Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 9A, RDS(ON) = 15mΩ @VGS = 10V. RDS(ON) = 20mΩ @VGS = 4.5V. Super high dense cell

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