48-CHANNEL Datasheet | Specifications & PDF Download

Preliminary www.DataSheet4U.com TSM4886 30V N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 30 10 @ VGS = 10V 13.5 @ VGS = 4.5V SOP-8 Pin De

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Si4800BDY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 0.0185 at VGS = 10 V 0.030 at VGS

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N-Channel 30-V(D-S) MOSFET GENERAL DESCRIPTION The ME4894 is the N-Channel logic enhancement mode power field effect transistors are produced using hi

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AO4801A 30V P-Channel MOSFET General Description Product Summary The AO4801A combines advanced trench MOSFET technology with a low resistance packa

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Chipstar Mciroelectronics Chipstar Micro-electronics CS4863 AB CS4863 ， 5.0V ；THD+N 1.0％，4Ω 2.2W 3Ω2.5Ｗ 。，， 。 CS4863 ，， ，。 CS4863

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Datasheet Boost 1channel white LED driver For large LCDs BD9488F ●General Description BD9488F is a high efficiency driver for white LEDs and designed

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AOZ1948 Single Channel LED Driver IC General Description The AOZ1948 is a high-efficiency Buck controller for general purpose high voltage and low vo

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PT2348 4.1-Channel Audio Processor with Subwoofer DESCRIPTION The PT2348 is a 4.1CH audio processor designed for Car Audio purpose. Using I2C interfa

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Shenzhen Tuofeng Semiconductor Technology co., LTD 4835 P-Channel Enhancement Mode MOSFET Features Pin Description • -30V/-8A, RDS(ON) = 16mΩ(typ.

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N-Channel Trench Power MOSFET General Description The 48N75 is N-channel MOS Field Effect Transistor designed for high current switching applications.

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N-Channel 30-V(D-S) MOSFET GENERAL DESCRIPTION The ME4856 is the N-Channel logic enhancement mode power field effect transistors are produced using hi

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P-Channel 30 V (D-S) MOSFET Si4483ADY Vishay Siliconix PRODUCT SUMMARY VDS (V) - 30 RDS(on) () 0.0088 at VGS = - 10 V 0.0153 at VGS = - 4.5 V ID

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AO4813 30V Dual P-Channel MOSFET General Description Product Summary The AO4813 combines advanced trench MOSFET technology with a low resistance pa

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AO4485 40V P-Channel MOSFET General Description The AO4485 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This de

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K3480-VB K3480-VB Datasheet N-Channel 100-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V ID (A) a Configuration 1

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRLB8748，IIRLB8748 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤4.8mΩ ·Enhancement

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APM9948K Dual N-Channel Enhancement Mode MOSFET Features • 60V/4A, R DS(ON) = 60mΩ(typ.) @ V GS = 10V R DS(ON) = 72mΩ(typ.) @ V GS =

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Product Folder Sample & Buy Technical Documents Tools & Software Support & Community TAS5548 SLES270A – NOVEMBER 2012 – REVISED APRIL 2015 TAS554

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