ME4856-G - N-Channel 30-V(D-S) MOSFET
The ME4856 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as
ME4856-G Features
* RDS(ON)≦6mΩ@VGS=10V
* RDS(ON)≦8.5mΩ@VGS=4.5V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC current capability APPLICATIONS
* Power Management in Note book
* Battery Powered System
* DC/DC Converter
* Load Switc
