Datasheet4U Logo Datasheet4U.com

ME4856-G N-Channel 30-V(D-S) MOSFET

ME4856-G Description

N-Channel 30-V(D-S) MOSFET GENERAL .
The ME4856 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

ME4856-G Features

* RDS(ON)≦6mΩ@VGS=10V
* RDS(ON)≦8.5mΩ@VGS=4.5V
* Super high density cell design for extremely low RDS(ON)

ME4856-G Applications

* Power Management in Note book
* Battery Powered System
* DC/DC Converter
* Load Switch e Ordering Information: ME4856 (Pb-free) ME4856-G (Green product-Halogen free) Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Co

📥 Download Datasheet

Preview of ME4856-G PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
ME4856-G
Manufacturer
Matsuki
File Size
383.41 KB
Datasheet
ME4856-G-Matsuki.pdf
Description
N-Channel 30-V(D-S) MOSFET

📁 Related Datasheet

  • ME4839W - WHITE SIDE BACKLIGHT (Micro Electronics)
  • ME4-H2 - Hydrogen Gas Sensor (Winsen)
  • ME4-NH3 - Ammonia Gas Sensor (Winsen)
  • ME4-SO2 - Electrochemical Sulfur Dioxide Sensor (Winsen)
  • ME401C - DC-DC Converter (Microne)
  • ME4052 - High-voltage dual-cell linear charger (ChipSourceTek)
  • ME4054 - Standalone Linear Li-Ion Battery Charger (Microne)
  • ME4054B-N - 500mA Lithium Ion Battery Linear Charger (ChipSourceTek)

📌 All Tags

N-Channel 30-VD-S MOSFET Matsuki
Matsuki ME4856-G-like datasheet