ME4856-G Datasheet - Matsuki

ME4856-G, N-Channel 30-V(D-S) MOSFET

N-Channel 30-V(D-S) MOSFET GENERAL .
The ME4856 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

datasheet Preview Page 1 from Datasheet4u.com

ME4856-G-Matsuki.pdf

ME4856-G Datasheet Preview — Preview of ME4856-G PDF

Datasheet Details

Part number:

ME4856-G

Manufacturer:

Matsuki

File Size:

383.41 KB

Description:

N-Channel 30-V(D-S) MOSFET

Features

* RDS(ON)≦6mΩ@VGS=10V
* RDS(ON)≦8.5mΩ@VGS=4.5V
* Super high density cell design for extremely low RDS(ON)

Applications

* Power Management in Note book
* Battery Powered System
* DC/DC Converter
* Load Switch e Ordering Information: ME4856 (Pb-free) ME4856-G (Green product-Halogen free) Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Co

ME4856-G Distributors

📁 Related Datasheet

ME4839W ME4-H2 ME4-NH3 ME4-SO2 ME401C ME4052

📌 All Tags

ME4856-G N-Channel 30-VD-S MOSFET Matsuki

Matsuki ME4856-G-like datasheet