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ME4856-G N-Channel 30-V(D-S) MOSFET

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Description

N-Channel 30-V(D-S) MOSFET GENERAL .
The ME4856 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

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Datasheet Specifications

Part number
ME4856-G
Manufacturer
Matsuki
File Size
383.41 KB
Datasheet
ME4856-G-Matsuki.pdf
Description
N-Channel 30-V(D-S) MOSFET

Features

* RDS(ON)≦6mΩ@VGS=10V
* RDS(ON)≦8.5mΩ@VGS=4.5V
* Super high density cell design for extremely low RDS(ON)

Applications

* Power Management in Note book
* Battery Powered System
* DC/DC Converter
* Load Switch e Ordering Information: ME4856 (Pb-free) ME4856-G (Green product-Halogen free) Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Co

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