ME4856-G Datasheet - Matsuki

ME4856-G N-Channel 30-V(D-S) MOSFET

The ME4856 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as.

ME4856-G Features

* RDS(ON)≦6mΩ@VGS=10V

* RDS(ON)≦8.5mΩ@VGS=4.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* Battery Powered System

* DC/DC Converter

* Load Switc

ME4856-G-Matsuki.pdf

ME4856-G Datasheet Preview — Preview of ME4856-G PDF

Datasheet Details

Part number:

ME4856-G

Manufacturer:

Matsuki

File Size:

383.41 KB

Description:

N-channel 30-v(d-s) mosfet.

ME4856-G Distributor

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ME4856-G ME4856-G N-Channel 30-VD-S MOSFET Matsuki