ME4812-G, ME4812 Datasheet - Matsuki

ME4812-G N-Channel 30-V(D-S) MOSFET

The ME4812 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology integrated Schottky diode. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low v.

ME4812-G Features

* Integrated Schottky diode

* RDS(ON)≦13mΩ@VGS=10V

* RDS(ON)≦21.5mΩ@VGS=4.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* Battery Powered System

ME4812-Matsuki.pdf

ME4812-G Datasheet Preview — This datasheet PDF includes multiple part numbers: ME4812-G, ME4812. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

ME4812-G, ME4812

Manufacturer:

Matsuki

File Size:

848.00 KB

Description:

N-channel 30-v(d-s) mosfet.

Note:

This datasheet PDF includes multiple part numbers: ME4812-G, ME4812.
Please refer to the document for exact specifications by model.

ME4812-G Distributor

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ME4812-G ME4812 N-Channel 30-VD-S MOSFET Matsuki