ME4812B-G, ME4812BB Datasheet - Matsuki

ME4812B-G N-Channel 30-V(D-S) MOSFET

The ME4812B is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as.

ME4812B-G Features

* RDS(ON)≦12mΩ@VGS=10V

* RDS(ON)≦21mΩ@VGS=4.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* Battery Powered System

* DC/DC Converter

* Load Switc

ME4812BB-Matsuki.pdf

ME4812B-G Datasheet Preview — This datasheet PDF includes multiple part numbers: ME4812B-G, ME4812BB. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

ME4812B-G, ME4812BB

Manufacturer:

Matsuki

File Size:

636.19 KB

Description:

N-channel 30-v(d-s) mosfet.

Note:

This datasheet PDF includes multiple part numbers: ME4812B-G, ME4812BB.
Please refer to the document for exact specifications by model.

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TAGS

ME4812B-G ME4812BB N-Channel 30-VD-S MOSFET Matsuki

ME4812B-G Distributor