4N25 Datasheet | Specifications & PDF Download

MDD14N25C N-channel MOSFET 250V MDD14N25C N-Channel MOSFET 250V, 10.2A, 0.28Ω General Description These N-channel MOSFET are produced using advanced

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N-Channel 250-V (D-S) MOSFET ME04N25/ME04N25-G GENERAL DESCRIPTION The ME04N25 is the N-Channel logic enhancement mode power field effect transistor

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SEMICONDUCTOR RFD14N05, RFD14N05SM, RFP14N05 December 1995 14A, 50V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs Features Packaging

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RFD14N05, RFD14N05SM, RFP14N05 Data Sheet January 2002 14A, 50V, 0.100 Ohm, N-Channel Power MOSFETs These are N-channel power MOSFETs manufactured

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MDD4N25 N-channel MOSFET 250V MDD4N25 N-Channel MOSFET 250V, 3.0A, 1.75Ω General Description The MDD4N25 uses advanced Magnachip’s MOSFET Technology

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Isc N-Channel MOSFET Transistor INCHANGE Semiconductor MDD14N25C ·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low ga

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N-Channel 250-V (D-S) MOSFET ME04N25/ME04N25-G GENERAL DESCRIPTION The ME04N25 is the N-Channel logic enhancement mode power field effect transistor

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4N25, 4N26, 4N27, 4N28 Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection FEATURES A C NC 1 2 3 6 B 5 C 4 E • Isolation

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220 packaging ·High speed switching ·Very high commutation ruggedness ·Easy to use ·100% avalanche

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Silicon N-Channel Power MOSFET ○R CS14N25 A8R General Description： CS14N25 A8R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-a

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MDP14N25C N-channel MOSFET 250V MDP14N25C N-Channel MOSFET 250V, 14A, 0.28Ω General Description The MDP14N25C is produced using advanced MagnaChip’s

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General Purpose Type Photocoupler LTV-4N25 Series/LTV-4N26 Series LTV-4N27 Series/LTV-4N28 Series 4N25 Series/4N26 Series/4N27 Series/4N28 Series Feat

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General Purpose Type Photocoupler LTV-4N25 Series/LTV-4N26 Series LTV-4N27 Series/LTV-4N28 Series 4N25 Series/4N26 Series/4N27 Series/4N28 Series Feat

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Silicon N-Channel Power MOSFET ○R CS14N25 A4R General Description： CS14N25 A4R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-a

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High Voltage, High Gain BiMOSFETTM Monolithic Bipolar MOS Transistor IXBK64N250 IXBX64N250 VCES = I = C110  VCE(sat) 2500V 64A 3.0V TO-264 (I

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by M4N25/D M4N25 6-Pin DIP Optoisolators Transistor Output The M4N25 device consists of a

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www.DataSheet4U.com PolarHTTM Power MOSFET N-Channel Enhancement Mode Preliminary Data Sheet IXTQ 64N25P IXTT 64N25P VDSS ID25 RDS(on) = 250 V =

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by M4N25/D M4N25 6-Pin DIP Optoisolators Transistor Output The M4N25 device consists of a

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