4N25 Datasheet | Specifications & PDF Download

RFD14N05, RFD14N05SM, RFP14N05 Data Sheet January 2002 14A, 50V, 0.100 Ohm, N-Channel Power MOSFETs These are N-channel power MOSFETs manufactured

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MDD14N25C N-channel MOSFET 250V MDD14N25C N-Channel MOSFET 250V, 10.2A, 0.28Ω General Description These N-channel MOSFET are produced using advanced

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SEMICONDUCTOR RFD14N05, RFD14N05SM, RFP14N05 December 1995 14A, 50V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs Features Packaging

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www.DataSheet4U.com 6 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER Features: • 4N2X series: 4N25, 4N26, 4N27, 4N28 • 4N3X series: 4N35, 4N36, 4N37, 4N38 • H1

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 4N25/D GlobalOptoisolator™ 6-Pin DIP Optoisolators Transistor Output The 4N25/A, 4N26

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GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS 4N25 4N37 4N26 H11A1 4N27 H11A2 4N28 H11A3 4N35 H11A4 SCHEMATIC 1 6 4N36 H11A5 WHITE PACKAGE (-M

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4NXXM, H11AXM General Purpose 6-Pin Phototransistor Optocouplers March 2007 4N25M, 4N26M, 4N27M, 4N28M, 4N35M, 4N36M, 4N37M, tm H11A1M, H11A2M, H11A3

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www.DataSheet4U.com General Purpose Type Photocoupler LTV-4N25 Series/LTV-4N26 Series LTV-4N27 Series/LTV-4N28 Series 4N25 Series/4N26 Series/4N27 Se

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www.DataSheet4U.com PolarHTTM Power MOSFET N-Channel Enhancement Mode Preliminary Data Sheet IXTQ 64N25P IXTT 64N25P VDSS ID25 RDS(on) = 250 V =

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Isc N-Channel MOSFET Transistor INCHANGE Semiconductor MDD14N25C ·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low ga

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High Voltage, High Gain BiMOSFETTM Monolithic Bipolar MOS Transistor IXBK64N250 IXBX64N250 VCES = I = C110  VCE(sat) 2500V 64A 3.0V TO-264 (I

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High Voltage, High Gain BiMOSFETTM Monolithic Bipolar MOS Transistor IXBK64N250 IXBX64N250 VCES = I = C110  VCE(sat) 2500V 64A 3.0V TO-264 (I

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4N2X 4N3X H11AX series 6-PIN PHOTOTRANSISTOR OPTOCOUPLER Feature: Certification & Compliance:  4N2X: 4N25, 4N26, 4N27, 4N28  Pb free and RoHS

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FDPF44N25T — N-Channel UniFETTM MOSFET FDPF44N25T N-Channel UniFETTM MOSFET 250 V, 44 A, 69 mΩ Features • RDS(on) = 69 mΩ (Max.) @ VGS = 10 V, ID = 2

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FQA34N25 October 2001 FQA34N25 250V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produce

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FQAF34N25 October 2001 FQAF34N25 250V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produ

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