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5.0v Datasheet, Features, Application

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JINAN JINGHENG

7N65 - 650V N Channel Power MOSFET

R SEMICONDUCTOR 7N65 7N65F 7N65D 7N65E 7N65M 7N65N 650V N-Channel Power MOSFET FEATURES ● RDS(ON)<1.5Ω @ VGS=10V ● Fast switching capability ● Low g.
1.0 · rating-1
ROUM

D8N25 - 8A 250V N-channel Enhancement Mode Power MOSFET

8N25/F8N25/I8N25/ E8N25/B8N25/D8N25 8A 250V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanced VDMOSFETs, is obtained by .
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ARK

FTA04N60 - 600V N-Channel MOSFET

FTP04N60 FTA04N60 600V, N-Channel MOSFET General Features • Low ON Resistance • Low Gate Charge • Peak Current vs. Pulse Width Curve • RoHS Compliant/.
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Silan Microelectronics

035R5ND - 30V N-CHANNEL MOSFET

Silan Microelectronics SVT035R5ND(MJ)(T)_Datasheet 100A, 30V N-CHANNEL MOSFET DESCRIPTION The SVT035R5ND(MJ)(T) is an N-channel enhancement mode pow.
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Matsuki

ME60N03 - 30V N-Channel Enhancement Mode MOSFET

ME60N03 30V N-Channel Enhancement Mode MOSFET VDS=30V RDS(ON), Vgs@10V,Ids@30A = 8.5mΩ RDS(ON), Vgs@4.5V,Ids@20A =13mΩ FEATURES Advanced trench proce.
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Alpha & Omega Semiconductors

AON6380 - 30V N-Channel MOSFET

AON6380 30V N-Channel AlphaMOS General Description • Trench Power AlphaMOS (αMOS LV) technology • Low RDS(ON) • Low Gate Charge • High Current Capabi.
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Fairchild Semiconductor

2N60B - 600V N-Channel MOSFET

www.DataSheet4U.com SSW2N60B / SSI2N60B November 2001 SSW2N60B / SSI2N60B 600V N-Channel MOSFET General Description These N-Channel enhancement mod.
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Alpha & Omega Semiconductors

AON7408 - 30V N-Channel MOSFET

AON7408 30V N-Channel MOSFET General Description • The AON7408 uses advanced trench technology and design to provide excellent RDS(ON) with low gate .
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Alpha & Omega Semiconductors

AON6414A - 30V N-Channel MOSFET

AON6414A 30V N-Channel MOSFET General Description Product Summary The AON6414A uses advanced trench technology to provide excellent RDS(ON), low ga.
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Alpha & Omega Semiconductors

AO3407 - 30V P-Channel MOSFET

AO3407 30V P-Channel MOSFET General Description The AO3407 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This de.
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Fuji

4MBI900VB-120R1-50 - IGBT

4MBI900VB-120R1-50 IGBT Power Module (V series) 1200V/900A/IGBT, ±900V/900A/RB-IGBT, 4-in-1 package ■ Features Higher efficiency Optimized Advanced T-.
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MicrochipTechnology

24C32 - 32K 5.0V I2C Smart Serial EEPROM

24C32 32K 5.0V I2C™ Smart Serial EEPROM FEATURES • Voltage operating range: 4.5V to 5.5V - Peak write current 3 mA at 5.5V - Maximum read current 150 .
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Fairchild Semiconductor

30N40 - 400V N-Channel MOSFET

      QFET                    .
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Shindengen Electric Mfg.Co.Ltd

S1VB60 - General Purpose Rectifiers(600V 1A)

SHINDENGEN General Purpose Rectifiers SIL Bridges S1VB60 600V 1A FEATURES •œ Small Single In-Line(:SIL)Package •œ High IFSM •œ Applicable to Automati.
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Alpha & Omega Semiconductors

AO3400 - 30V N-Channel MOSFET

AO3400 30V N-Channel MOSFET General Description Product Summary The AO3400 combines advanced trench MOSFET technology with a low resistance package.
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BOSER Technology

MPD-810H - 120W 10~30VDC DC-DC ATX Open Frame Power-Supply

MPD-810H Industrial Power Supply 120W 10~30VDC DC-DC ATX Open Frame Power Supply DC-DC 0.54 8.38 6.89 0.745 14.16 15.24 14.44 CN2 PIN 1~3 4~8 9~1.
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Alpha & Omega Semiconductors

AOD4184A - 40V N-Channel MOSFET

AOD4184A 40V N-Channel MOSFET General Description The AOD4184A combines advanced trench MOSFET technology with a low resistance package to provide ex.
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Silan Microelectronics

SVD2N70F - 700V N-CHANNEL MOSFET

SVD2N70M/F/T_Datasheet 2A, 700V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD2N70M/F/T is an N-channel enhancement mode power MOS field effect transistor w.
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UBIQ

QM0016P - N-Ch 100V Fast Switching MOSFETs

QM0016P N-Ch 100V Fast Switching MOSFETs General Description The QM0016P is the highest performance trench N-ch MOSFETs with extreme high cell densit.
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LEADCHIP

LC2770 - 40V Synchronous Constant Current LED Driver

LC2770 40V Synchronous Constant Current LED Driver DESCRIPTION LC2770 is a 40V synchronous constant current buck LED driver, with 55mΩ High-Side and.
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