50N06 Datasheet | Specifications & PDF Download

RSD150N06FRA 　　 Nch 60V 15A Power MOSFET 　　 Datasheet VDSS RDS(on)(Max.) ID PD 60V 40mΩ ±15A 20W lFeatures 1) Low on - resistance 2) Fast switchin

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Chinahaiso electronic Co.Ltd http://www.chinahaiso.com MOSFET GFP 50N06 GFP 50N06 FEATURES () Low RD s (on) (0.023 Ω)@Vgs=10V Low Gate Charge (Typic

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YJB150N06BQ RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS ● ID ● RDS(ON)( at VGS=10V) ● 100% UIS Tested ●

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KIA 50 Amps, 60 Volts N-CHANNEL MOSFET ：13641469108 QQ:543158798 50N06 SEMICONDUCTORS 1.Description The KIA50N06 is three-terminal silicon device

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50N06(F,B,H) 50A mps,60 Volts N-CHANNEL MOSFET FEATURE  50A,60V,RDS(ON)=16mΩ@VGS=10V/25A  Low gate charge  Low Ciss  Fast switching  100% aval

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50N06(F,B,H) 50A mps,60 Volts N-CHANNEL MOSFET FEATURE  50A,60V,RDS(ON)=16mΩ@VGS=10V/25A  Low gate charge  Low Ciss  Fast switching  100% avala

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FQP50N06 ® FQP50N06 Pb Pb Free Plating Product 50A,60V Heatsink Planar N-Channel Power MOSFET Features • 50A, 60V, RDS(on) = 0.022Ω @VGS = 10 V

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CS50N06 N MOSFT Description CS50N06 N MOSFET。 ，， 。、 PWM 、 。 Features ·VDSS =60V ·ID =50A ·RDS(ON)＜10mΩ (VGS=10V) CS50N06 TO-220 1.Gate 2.Drain 3.

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UNISONIC TECHNOLOGIES CO., LTD UTT50N06 50A, 60V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC UTT50N06 is an N-channel power MOSFET using UTC’s advanc

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UNISONIC TECHNOLOGIES CO., LTD UTT50N06M 50A, 60V N-CHANNEL ENHANCEMENT MODE TRENCH POWER MOSFET POWER MOSFET  DESCRIPTION The UTC UTT50N06M is a N

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Isc N-Channel MOSFET Transistor UTT50N06L-TA3 ·FEATURES ·With To-220 package ·Low input capacitance and gate charge ·Low gate input resistance ·100%

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4V Drive Nch MOSFET RSD050N06FRA Structure Silicon N-channel MOSFET Features 1) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be

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50A 60V N-channel Enhancement Mode Power MOSFET D50N06 1 Description These N-channel Enhanced VDMOSFETs Used advanced trench technology design, prov

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Data Sheet September 2013 RFP50N06 N-Channel Power MOSFET 60V, 50A, 22 mΩ These N-Channel power MOSFETs are manufactured using the MegaFET process.

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www.DataSheet4U.com STP50N06 STP50N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP50N06 STP50N06FI s s s s s s s s V DSS 60 V 60 V

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UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT150N06 150 Amps, 60 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION Power MOSFET The UTC UTT150N06 is an N-

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N R N-CHANNEL MOSFET JCS50N06H MAIN CHARACTERISTICS Package ID VDSS Rdson-max （@Vgs=10V） Qg-typ 50 A 60 V 23 mΩ 34 nC   UPS APPLICATI

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Isc N-Channel MOSFET Transistor UTT50N06L-TN3 ·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance

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