50N06 Datasheet | Specifications & PDF Download

50N06(F,B,H) 50A mps,60 Volts N-CHANNEL MOSFET FEATURE  50A,60V,RDS(ON)=16mΩ@VGS=10V/25A  Low gate charge  Low Ciss  Fast switching  100% avala

(138 views)

N-Channel Trench Power MOSFET General Description The CS50N06 combines advanced trench MOSFET technology with a low resistance package to provide extr

(71 views)

FQP50N06 ® FQP50N06 Pb Pb Free Plating Product 50A,60V Heatsink Planar N-Channel Power MOSFET Features • 50A, 60V, RDS(on) = 0.022Ω @VGS = 10 V

(64 views)

RSD150N06FRA 　　 Nch 60V 15A Power MOSFET 　　 Datasheet VDSS RDS(on)(Max.) ID PD 60V 40mΩ ±15A 20W lFeatures 1) Low on - resistance 2) Fast switchin

(57 views)

3 lmnopqrsÿurvwxwrnwnoÿxyzq{z0r{|}x~ 45367879 987  ÿ6 7  ÿ ÿ6   ÿ 3  #  ÿÿ$ % &0'& 3 'R % (*2=CBEA*)@6<1)*+O@C25CÿA

(50 views)

www.DataSheet4U.com STP50N06 STP50N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP50N06 STP50N06FI s s s s s s s s V DSS 60 V 60 V

(50 views)

N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 50A ,RDS(ON) = 17mΩ (typ) @VGS = 10V. Super high dense cell design for extremely low

(40 views)

MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MTB50N06VL/D TMOS Power Field Effect Transistor D2PAK for Surface Mount TMO

(37 views)

CED50N06/CEU50N06 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 36A , RDS(ON) = 18mΩ(typ) @VGS = 10V. Super high dense cell design

(34 views)

Chinahaiso electronic Co.Ltd http://www.chinahaiso.com MOSFET GFP 50N06 GFP 50N06 FEATURES () Low RD s (on) (0.023 Ω)@Vgs=10V Low Gate Charge (Typic

(32 views)

N R N-CHANNEL MOSFET JCS50N06H MAIN CHARACTERISTICS Package ID VDSS Rdson-max （@Vgs=10V） Qg-typ 50 A 60 V 23 mΩ 34 nC   UPS APPLICATI

(32 views)

YJB150N06BQ RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS ● ID ● RDS(ON)( at VGS=10V) ● 100% UIS Tested ●

(32 views)

OptiMOS® Power-Transistor Features • For fast switching converters and sync. rectification • N-channel enhancement - normal level • 175 °C operating t

(32 views)

Philips Semiconductors Product specification TrenchMOS™ transistor Logic level FET FEATURES • ’Trench’ technology • Very low on-state resistance • F

(31 views)

CMD50N06/CMU50N06 N-Channel 60V MOSFET General Description The 50N06 combines advanced trench MOSFET technology with a low resistance package to pro

(31 views)

RSD150N06FRA 　　 Nch 60V 15A Power MOSFET 　　 Datasheet VDSS RDS(on)(Max.) ID PD 60V 40mΩ ±15A 20W lFeatures 1) Low on - resistance 2) Fast switchin

(31 views)

sales.Mr.wang13826508770 www.sztssd.com Description AP50N06D 60V N-Channel Enhancement Mode MOSFET The AP50N06D uses advanced trench technology to

(31 views)

FQP50N06 QFET FQP50N06 60V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fa

(30 views)

MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MTP50N06V/D TMOS Power Field Effect Transistor TMOS V is a new technology d

(30 views)

Philips Semiconductors Product specification TrenchMOS™ transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-

(29 views)