50N60 Datasheet | Specifications & PDF Download

SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance,

(46 views)

Advanced Technical Information www.DataSheet4U.com IGBT with Reverse Blocking capability IXRH 50N80 IXRH 50N60 VCES = 600 / 800V IC25 = 60 A VCE(sa

(44 views)

Advanced Technical Information IGBT with Reverse Blocking capability IXRH 50N80 IXRH 50N60 VCES = 600 / 800V IC25 = 60 A VCE(sat) = 2.5 V tf = 75 n

(42 views)

Preliminary Technical Information XPTTM 600V GenX3TM Extreme Light Punch Through IGBT for 20-60 kHz Switching IXXH50N60C3 VCES = IC110 = V ≤ CE(sat

(41 views)

XPTTM 600V IGBTs GenX3TM Extreme Light Punch Through IGBT for 5-30 kHz Switching IXXA50N60B3 IXXP50N60B3 IXXH50N60B3 Symbol VCES VCGR VGES VGEM IC25

(38 views)

SGW50N60HS www.DataSheet4U.com High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time –

(36 views)

Advance Technical Information 600V XPTTM IGBT GenX3TM Extreme Light Punch through IGBT for 20-60kHz Switching IXXH150N60C3 VCES = 600V IC110 = 150

(35 views)

SEMICONDUCTOR TECHNICAL DATA General Description It s mainly suitable for low viltage applications such as automotive, DC/DC converters and a load swi

(35 views)

X-Class HiPerFETTM Power MOSFET Preliminary Technical Information IXFT50N60X IXFQ50N60X IXFH50N60X VDSS = ID25 = RDS(on) 600V 50A 73m N-Channel

(33 views)

IGBT High Speed Short Circuit SOA Capability mêÉäáãáå~êó=Ç~í~=ëÜÉÉí IXSH 50N60B V`bp I`OR V`bEë~íF = 600 V = 75 A = 2.5 V Symbol VCES VCGR VGES VG

(33 views)

HiPerFASTTM IGBT Surface Mountable IXGH50N60A VCES IXGH50N60AS IC25 VCE(sat) tfi = 600 V = 75 A = 2.7 V = 275 ns Symbol www.DataSheet4U.com Test C

(32 views)

IGBT NGTB50N60L2WG This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provide

(32 views)

IGBT High speed IGBT in Trench and Fieldstop technology IGW50N60H3 600V high speed switching series third generation Data sheet Industrial Power Contr

(31 views)

www.DataSheet4U.com HiPerFASTTM IGBT with Diode IXGK 50N60C2D1 IXGX 50N60C2D1 C2-Class High Speed IGBTs VCES IC25 VCE(sat) tfi(typ) Preliminary D

(31 views)

(31 views)

Polar3TM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFT50N60P3 IXFQ50N60P3 IXFH50N60P3 Symbol VDSS

(31 views)

NGTB50N60FWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior perfo

(31 views)

50A,60V N-Channel Power Mosfet FEATURES  RDS(ON) =17mΩ@ VGS = 10V,ID=20A  High Current Capacity : ID=50A  Low reverse current. Pb Lead-free Prod

(30 views)

Preliminary Technical Information 600V XPTTM IGBT GenX3TM Extreme Light Punch through IGBT for 10-30kHz Switching IXYN150N60B3 E VCES = 600V IC110

(30 views)

TrenchStop Series www.DataSheet4U.com IKW50N60T q Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel

(30 views)