50N60 Datasheet | Specifications & PDF Download

http://www.fujielectric.com/products/semiconductor/ FGW50N60H Discrete IGBT (High-Speed V series) 600V / 50A Features Low power loss Low switching su

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www.DataSheet4U.com Preliminary data IGBT with Diode Combi Pack Short Circuit SOA Capability VCES = 600 V IXSX50N60AU1 = 75 A IXSX50N60AU1S I C25 V

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IKW50N60TA TRENCHSTOPTM Series q Low Loss DuoPack : IGBT in TRENCHSTOPTM and Fieldstop technology with soft, fast recovery anti-parallel Emitter Co

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IKFW50N60DH3E TRENCHSTOPTM Advanced Isolation High speed switching series third generation IGBT copacked with Rapid 1 fast and soft antiparallel di

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www.DataSheet4U.com Preliminary data IGBT with Diode Combi Pack Short Circuit SOA Capability VCES = 600 V IXSX50N60AU1 = 75 A IXSX50N60AU1S I C25 V

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www.DataSheet4U.com HiPerFASTTM IGBT ISOPLUS247TM VCES IXGR 50N60B IXGR 50N60BD1 IC25 VCE(sat) (Electrically Isolated Back Surface) tfi(typ) = 600

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TrenchStop Series www.DataSheet4U.com IKW50N60T q Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel

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IGW50N60T TRENCHSTOP™ Series Low Loss IGBT : IGBT in TRENCHSTOP™ and Fieldstop technology Features:  Very low VCE(sat) 1.5V (typ.)  Maximum Junctio

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HiPerFAST IGBT ISOPLUS247TM TM IXGR 50N60B2 IXGR 50N60B2D1 B2-Class High Speed IGBTs (Electrically Isolated Back Surface) Preliminary Data Sheet VC

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www.DataSheet4U.com HiPerFAST TM IGBT with Diode C2-Class High Speed IGBTs Preliminary Data Sheet IXGR 50N60C2 IXGR 50N60C2D1 VCES IC25 VCE(sat) tf

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IGBT TRENCHSTOP™ Performance technology copacked with RAPID 1 fast anti-parallel diode IKW50N60DTP 600V DuoPack IGBT and diode TRENCHSTOPTM Performanc

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TrenchStop® Series IKW50N60T q Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel Emitter Contro

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SEMICONDUCTOR TECHNICAL DATA General Description It s mainly suitable for low viltage applications such as automotive, DC/DC converters and a load swi

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Advanced Technical Information IGBT with Reverse Blocking capability IXRH 50N80 IXRH 50N60 VCES = 600 / 800V IC25 = 60 A VCE(sat) = 2.5 V tf = 75 n

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Advance Technical Data IGBT with Diode IXGK 50N60A2D1 IXGX 50N60A2D1 V I CES VC25 CE(sat) = 600 V = 75 A = 1.4 V Low Saturation Voltage Symbol

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Advance Technical Data HiPerFASTTM IGBT with Diode IXGK 50N60B2D1 IXGX 50N60B2D1 B2-Class High Speed IGBTs V CES IC25 VCE(sat) t fi(typ) = 600 V

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HiPerFASTTM High Speed IGBT C2-Class IXGH50N60C2 IXGT50N60C2 VCES = 600V IC110 = 50A VCE(sat)  2.7V tfi(typ) = 48ns Symbol VCES VCGR VGES VGEM

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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) ≤73mΩ@VGS= 10V ·Fast

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XPTTM 600V IGBTs GenX3TM Extreme Light Punch Through IGBT for 5-30 kHz Switching IXXA50N60B3 IXXP50N60B3 IXXH50N60B3 Symbol VCES VCGR VGES VGEM IC25

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