Advanced Technical Information IGBT with Reverse .
KEC
KGT50N60KDA - NPT IGBT
SEMICONDUCTOR TECHNICAL DATA General Description KEC NPT Trench IGBTs offer low switching losses, high energy efficiency and short circuit ruggedness..
KEC
050N60PA - KMB050N60PA
SEMICONDUCTOR TECHNICAL DATA General Description It s mainly suitable for low viltage applications such as automotive, DC/DC converters and a load swi.
Infineon Technologies
G50H603 - IGW50N60H3
IGBT HighspeedIGBTinTrenchandFieldstoptechnology IGW50N60H3 600Vhighspeedswitchingseriesthirdgeneration Datasheet IndustrialPowerContr.
ON Semiconductor
G50N60F - IGBT
NGTG50N60FWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior perfo.
Fuji Electric
FGW50N60HD - Discrete IGBT
http://www.fujielectric.com/products/semiconductor/ FGW50N60HD Discrete IGBT Discrete IGBT (High-Speed V series) 600V / 50A Features Low power loss.
IXYS
IXXH150N60C3 - IGBT
Advance Technical Information 600V XPTTM IGBT GenX3TM Extreme Light Punch through IGBT for 20-60kHz Switching IXXH150N60C3 VCES = 600V IC110 = 150.
WillSEMI
WCR650N60TG - MOSFET
WCR650N60T Series WCR650N60T/ WCR650N60TF/ WCR650N60TG/ WCR650N60TN 600V N-Channel Super Junction MOSFET Description Features The WCR600N60T seri.
IXYS
50N60A - IGBT
HiPerFASTTM IGBT Surface Mountable IXGH50N60A IXGH50N60AS VCES = 600 V IC25 = 75 A VCE(sat) = 2.7 V t = 275 ns fi Symbol Test Conditions Max.
IXYS
IXXA50N60B3 - 600V IGBTs
XPTTM 600V IGBTs GenX3TM Extreme Light Punch Through IGBT for 5-30 kHz Switching IXXA50N60B3 IXXP50N60B3 IXXH50N60B3 Symbol VCES VCGR VGES VGEM IC25.
Din-Tek
DTGN50N60 - Field Stop Trench IGBTs
General Description Din-Tek Field Stop Trench IGBTs offer low switching losses, high energy efficiency and short circuit ruggedness. It is designed fo.
IXYS
50N60 - IXRH50N60
Advanced Technical Information IGBT with Reverse Blocking capability IXRH 50N80 IXRH 50N60 VCES = 600 / 800V IC25 = 60 A VCE(sat) = 2.5 V tf = 75 n.
IXYS
IXXH50N60B3 - 600V IGBTs
XPTTM 600V IGBTs GenX3TM Extreme Light Punch Through IGBT for 5-30 kHz Switching IXXA50N60B3 IXXP50N60B3 IXXH50N60B3 Symbol VCES VCGR VGES VGEM IC25.
IXYS
IXXP50N60B3 - 600V IGBTs
XPTTM 600V IGBTs GenX3TM Extreme Light Punch Through IGBT for 5-30 kHz Switching IXXA50N60B3 IXXP50N60B3 IXXH50N60B3 Symbol VCES VCGR VGES VGEM IC25.
GME
BL50N60 - N-Channel Power Mosfet
50A,60V N-Channel Power Mosfet FEATURES RDS(ON) =17mΩ@ VGS = 10V,ID=20A High Current Capacity : ID=50A Low reverse current. Pb Lead-free Prod.
WillSEMI
WCR650N60TN - MOSFET
WCR650N60T Series WCR650N60T/ WCR650N60TF/ WCR650N60TG/ WCR650N60TN 600V N-Channel Super Junction MOSFET Description Features The WCR600N60T seri.
WillSEMI
WCR650N60TF - MOSFET
WCR650N60T Series WCR650N60T/ WCR650N60TF/ WCR650N60TG/ WCR650N60TN 600V N-Channel Super Junction MOSFET Description Features The WCR600N60T seri.
WillSEMI
WCR650N60T - MOSFET
WCR650N60T Series WCR650N60T/ WCR650N60TF/ WCR650N60TG/ WCR650N60TN 600V N-Channel Super Junction MOSFET Description Features The WCR600N60T seri.
IXYS
50N60AS - IGBT
HiPerFASTTM IGBT Surface Mountable IXGH50N60A IXGH50N60AS VCES = 600 V IC25 = 75 A VCE(sat) = 2.7 V t = 275 ns fi Symbol Test Conditions Max.
IXYS
IXFH50N60X - Power MOSFET
X-Class HiPerFETTM Power MOSFET Preliminary Technical Information IXFT50N60X IXFQ50N60X IXFH50N60X VDSS = ID25 = RDS(on) 600V 50A 73m N-Channel.
Infineon
IGW50N60TP - IGBT
IGBT TRENCHSTOPTMPerformancetechnology IGW50N60TP 600VIGBTTRENCHSTOPTMPerformanceseries Datasheet IndustrialPowerControl IGW50N60TP TRENCHST.
