50N60 Datasheet | Specifications & PDF Download

www.vishay.com SiHG050N60E Vishay Siliconix E Series Power MOSFET D TO-247AC S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(o

(75 views)

XPTTM 600V IGBT GenX3TM w/ Diode IXXH50N60B3D1 Extreme Light Punch Through IGBT for 5-30kHz Switching Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 I

(63 views)

Advanced Technical Information IGBT with Reverse Blocking capability IXRH 50N80 IXRH 50N60 VCES = 600 / 800V IC25 = 60 A VCE(sat) = 2.5 V tf = 75 n

(52 views)

Preliminary Technical Information XPTTM 600V GenX3TM Extreme Light Punch Through IGBT for 20-60 kHz Switching IXXH50N60C3 VCES = IC110 = V ≤ CE(sat

(46 views)

IGBT High speed IGBT in Trench and Fieldstop technology IGW50N60H3 600V high speed switching series third generation Data sheet Industrial Power Contr

(36 views)

SEMICONDUCTOR TECHNICAL DATA General Description It s mainly suitable for low viltage applications such as automotive, DC/DC converters and a load swi

(35 views)

www.vishay.com SiHG150N60E Vishay Siliconix E Series Power MOSFET D TO-247AC S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(o

(34 views)

http://www.fujielectric.com/products/semiconductor/ FGW50N60H Discrete IGBT (High-Speed V series) 600V / 50A Features Low power loss Low switching su

(29 views)

SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance,

(28 views)

TrenchStop Series www.DataSheet4U.com IKW50N60T q Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel

(26 views)

SEMICONDUCTOR TECHNICAL DATA General Description KEC NPT Trench IGBTs offer low switching losses, high energy efficiency and short circuit ruggedness.

(24 views)

IKW50N60T TRENCHSTOP™ Series q Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Contr

(23 views)

http://www.fujielectric.com/products/semiconductor/ FGW50N60HD Discrete IGBT Discrete IGBT (High-Speed V series) 600V / 50A Features Low power loss

(22 views)

IGBT Features  600V,50A  VCE(sat)(typ.)=2.5V@VGE=15V,IC=50A  High speed switching  Higher system efficiency  Soft current turn-off waveforms  Sq

(22 views)

RM50N60IP N-Channel Enhancement Mode Power MOSFET Description The RM50N60IP uses advanced trench technology and design to provide excellent RDS(ON)

(22 views)

www.DataSheet4U.com Preliminary data IGBT with Diode Combi Pack Short Circuit SOA Capability VCES = 600 V IXSX50N60AU1 = 75 A IXSX50N60AU1S I C25 V

(20 views)

www.DataSheet4U.com Preliminary data HiPerFASTTM IGBT with Diode Combi Pack IXGX50N60AU1 IXGX50N60AU1S VCES IC25 VCE(sat) tfi = 600 V = 75 A = 2.

(19 views)

HiPerFASTTM IGBT Surface Mountable IXGH50N60A VCES IXGH50N60AS IC25 VCE(sat) tfi = 600 V = 75 A = 2.7 V = 275 ns Symbol www.DataSheet4U.com Test C

(19 views)

HiPerFASTTM IGBT with HiPerFRED Buck & boost configurations IXGN 50N60BD2 IXGN 50N60BD3 VCES IC25 VCE(sat) tfi = 600 V = 75 A = 2.5 V = 150 ns

(19 views)

IGW50N60T TRENCHSTOP™ Series Low Loss IGBT : IGBT in TRENCHSTOP™ and Fieldstop technology Features:  Very low VCE(sat) 1.5V (typ.)  Maximum Junctio

(19 views)