Macronix International
MX26LV400 - 4M-BIT [512Kx8/256Kx16] CMOS SINGLE VOLTAGE 3V ONLY BOOT SECTOR HIGH SPEED eLiteFlashTM MEMORY
MX26LV400
Macronix NBit TM Memory Family 4M-BIT [512Kx8/256Kx16] CMOS SINGLE VOLTAGE 3V ONLY BOOT SECTOR HIGH SPEED eLiteFlashTM MEMORY
FEATURES
• Ext
(27 views)
Samsung semiconductor
K5A3340YT - Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM
(25 views)
Samsung semiconductor
K5A3240YT - Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM
(21 views)
Macronix International
MX29F040 - 4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY
MX29F040
4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY
FEATURES
• 524,288 x 8 only • Single power supply operation - 5.0V only operation for read, er
(21 views)
Macronix International
MX29F400CB - 4M-BIT [512Kx8/256Kx16] CMOS SINGLE VOLTAGE 5V ONLY BOOT SECTOR FLASH MEMORY
www.DataSheet4U.com
MX29F400C T/B
4M-BIT [512Kx8/256Kx16] CMOS SINGLE VOLTAGE 5V ONLY BOOT SECTOR FLASH MEMORY
FEATURES
• 524,288 x 8/262,144 x 16 sw
(20 views)
Macronix International
MX29F400CT - 4M-BIT [512Kx8/256Kx16] CMOS SINGLE VOLTAGE 5V ONLY BOOT SECTOR FLASH MEMORY
www.DataSheet4U.com
MX29F400C T/B
4M-BIT [512Kx8/256Kx16] CMOS SINGLE VOLTAGE 5V ONLY BOOT SECTOR FLASH MEMORY
FEATURES
• 524,288 x 8/262,144 x 16 sw
(20 views)
Dense-Pac Microsystems
DPS128C32BV3 - 512kx8 High Speed CMOS SRAM
4 Megabit High Speed CMOS SRAM
DPS128C32BV3
DESCRIPTION: The DPS128C32BV3 ‘’VERSA-STACK’’ module is a revolutionary new high speed memory subsystem u
(17 views)
Hynix Semiconductor
HY29F400TT90 - 4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory
HY29F400
4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory
KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirement
(15 views)
Samsung semiconductor
KM23C4100DET - 4M-Bit (512Kx8 /256Kx16) CMOS MASK ROM
KM23C4100D(E)T
4M-Bit (512Kx8 /256Kx16) CMOS MASK ROM
FEATURES
• Switchable organization 524,288 x 8(byte mode) 262,144 x 16(word mode) • Fast access
(15 views)
Samsung semiconductor
K6R4008V1C - 512Kx8 Bit High Speed Static
www.DataSheet4U.com
PRELIMINARY CMOS SRAM
K6R4008V1C-C/C-L, K6R4008V1C-I/C-P
3Document Title
512Kx8 Bit High Speed Static RAM(3.3V Operating). Opera
(15 views)
Hynix Semiconductor
HY29F400BT45 - 4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory
HY29F400
4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory
KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirement
(14 views)
White Electronic Designs Corporation
WMF512K8-xxx5 - 512Kx8 MONOLITHIC FLASH
White Electronic Designs
www.DataSheet4U.com
WMF512K8-XXX5
512Kx8 MONOLITHIC FLASH, SMD 5962-96692
FEATURES
Access Times of 60, 70, 90, 120, 150ns P
(14 views)
Samsung semiconductor
KM23C4000DTY - 4M-Bit (512Kx8) CMOS MASK ROM
KM23C4000D(E)TY
4M-Bit (512Kx8) CMOS MASK ROM
FEATURES
• 524,288 x 8 bit organization • Access time : 80ns(Max.) • Supply voltage : single +5V • Curre
(14 views)
Samsung semiconductor
KM23C4000DG - 4M-Bit (512Kx8) CMOS MASK ROM
KM23C4000D(G)
4M-Bit (512Kx8) CMOS MASK ROM
FEATURES
• 524,288x8 bit organization • Access time : 80ns(Max.) • Supply voltage : single +5V • Current c
(14 views)
Samsung
KM684000C - 512Kx8 bit Low Power CMOS Static RAM
KM684000C Family
Document Title
512Kx8 bit Low Power CMOS Static RAM
CMOS SRAM
Revision History
Revision No.
0.0 1.0
History
Initial draft Finalize
(13 views)
ICSI
IC62LV5128L - 512Kx8 bit Low Voltage and Ultra Low Power CMOS Static RAM
www.DataSheet4U.com
IC62LV5128L IC62LV5128LL
Document Title
512Kx8 bit Low Voltage and Ultra Low Power CMOS Static RAM
Revision History
Revision No
(13 views)
Samsung semiconductor
KM23C4000DETY - 4M-Bit (512Kx8) CMOS MASK ROM
KM23C4000D(E)TY
4M-Bit (512Kx8) CMOS MASK ROM
FEATURES
• 524,288 x 8 bit organization • Access time : 80ns(Max.) • Supply voltage : single +5V • Curre
(13 views)
Samsung semiconductor
KM23C4000D - 4M-Bit (512Kx8) CMOS MASK ROM
KM23C4000D(G)
4M-Bit (512Kx8) CMOS MASK ROM
FEATURES
• 524,288x8 bit organization • Access time : 80ns(Max.) • Supply voltage : single +5V • Current c
(13 views)
Samsung semiconductor
KM23C4100DT - 4M-Bit (512Kx8 /256Kx16) CMOS MASK ROM
KM23C4100D(E)T
4M-Bit (512Kx8 /256Kx16) CMOS MASK ROM
FEATURES
• Switchable organization 524,288 x 8(byte mode) 262,144 x 16(word mode) • Fast access
(12 views)
Samsung semiconductor
K5A3240YBC-T855 - Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM
K5A3x40YT(B)C
Document Title
Multi-Chip Package MEMORY
Preliminary MCP MEMORY
32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) F
(12 views)