MX29F040 (Macronix International)
4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY
MX29F040
4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY
FEATURES
• 524,288 x 8 only • Single power supply operation - 5.0V only operation for read, er
(44 views)
MX26LV400 (Macronix International)
4M-BIT [512Kx8/256Kx16] CMOS SINGLE VOLTAGE 3V ONLY BOOT SECTOR HIGH SPEED eLiteFlashTM MEMORY
MX26LV400
Macronix NBit TM Memory Family 4M-BIT [512Kx8/256Kx16] CMOS SINGLE VOLTAGE 3V ONLY BOOT SECTOR HIGH SPEED eLiteFlashTM MEMORY
FEATURES
• Ext
(37 views)
K5A3340YT (Samsung semiconductor)
Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM
(34 views)
K5A3240YT (Samsung semiconductor)
Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM
(31 views)
MX29F400CT (Macronix International)
4M-BIT [512Kx8/256Kx16] CMOS SINGLE VOLTAGE 5V ONLY BOOT SECTOR FLASH MEMORY
www.DataSheet4U.com
MX29F400C T/B
4M-BIT [512Kx8/256Kx16] CMOS SINGLE VOLTAGE 5V ONLY BOOT SECTOR FLASH MEMORY
FEATURES
• 524,288 x 8/262,144 x 16 sw
(31 views)
MX29F400CB (Macronix International)
4M-BIT [512Kx8/256Kx16] CMOS SINGLE VOLTAGE 5V ONLY BOOT SECTOR FLASH MEMORY
www.DataSheet4U.com
MX29F400C T/B
4M-BIT [512Kx8/256Kx16] CMOS SINGLE VOLTAGE 5V ONLY BOOT SECTOR FLASH MEMORY
FEATURES
• 524,288 x 8/262,144 x 16 sw
(30 views)
K6X4008C1F (Samsung semiconductor)
512Kx8 bit Low Power full CMOS Static RAM
K6X4008C1F Family
Document Title
512Kx8 bit Low Power full CMOS Static RAM
Revision History
Revision No. History
0.0 Initial draft
0.1 Revised - Added
(26 views)
KM23C4000D (Samsung semiconductor)
4M-Bit (512Kx8) CMOS MASK ROM
KM23C4000D(G)
4M-Bit (512Kx8) CMOS MASK ROM
FEATURES
• 524,288x8 bit organization • Access time : 80ns(Max.) • Supply voltage : single +5V • Current c
(26 views)
KM23C4000DG (Samsung semiconductor)
4M-Bit (512Kx8) CMOS MASK ROM
KM23C4000D(G)
4M-Bit (512Kx8) CMOS MASK ROM
FEATURES
• 524,288x8 bit organization • Access time : 80ns(Max.) • Supply voltage : single +5V • Current c
(26 views)
EDI88512CA-XMXG (Microsemi)
512Kx8 Plastic Monolithic SRAM CMOS
EDI88512CA-XMXG WPS512K8X-XRJXG
512Kx8 Plastic Monolithic SRAM CMOS
FEATURES
512Kx8 bit CMOS Static Random Access Memory
• Access Times of 17,
(26 views)
F25L004A (Elite Semiconductor)
4Mbit (512Kx8) 3V Only Serial Flash Memory
www.DataSheet4U.com
ESMT
F25L004A 4Mbit (512Kx8)
3V Only Serial Flash Memory
FEATURES
Single supply voltage 2.7~3.6V Speed - Read max frequency
(25 views)
WMF512K8-xxx5 (White Electronic Designs Corporation)
512Kx8 MONOLITHIC FLASH
White Electronic Designs
www.DataSheet4U.com
WMF512K8-XXX5
512Kx8 MONOLITHIC FLASH, SMD 5962-96692
FEATURES
Access Times of 60, 70, 90, 120, 150ns P
(25 views)
KM23C4100DET (Samsung semiconductor)
4M-Bit (512Kx8 /256Kx16) CMOS MASK ROM
KM23C4100D(E)T
4M-Bit (512Kx8 /256Kx16) CMOS MASK ROM
FEATURES
• Switchable organization 524,288 x 8(byte mode) 262,144 x 16(word mode) • Fast access
(24 views)
EDI88512CA (ETC)
512Kx8 Monolithic SRAM/ SMD 5962-95600
EDI88512CA
512Kx8 Monolithic SRAM, SMD 5962-95600
FEATURES
■ Access Times of 15, 17, 20, 25, 35, 45, 55ns ■ Data Retention Function (LPA version) ■ T
(24 views)
KM684000C (Samsung)
512Kx8 bit Low Power CMOS Static RAM
KM684000C Family
Document Title
512Kx8 bit Low Power CMOS Static RAM
CMOS SRAM
Revision History
Revision No.
0.0 1.0
History
Initial draft Finalize
(24 views)
DPS128C32BV3 (Dense-Pac Microsystems)
512kx8 High Speed CMOS SRAM
4 Megabit High Speed CMOS SRAM
DPS128C32BV3
DESCRIPTION: The DPS128C32BV3 ‘’VERSA-STACK’’ module is a revolutionary new high speed memory subsystem u
(24 views)
KM23C4100DT (Samsung semiconductor)
4M-Bit (512Kx8 /256Kx16) CMOS MASK ROM
KM23C4100D(E)T
4M-Bit (512Kx8 /256Kx16) CMOS MASK ROM
FEATURES
• Switchable organization 524,288 x 8(byte mode) 262,144 x 16(word mode) • Fast access
(23 views)
K5A3240YBC-T755 (Samsung semiconductor)
Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM
K5A3x40YT(B)C
Document Title
Multi-Chip Package MEMORY
Preliminary MCP MEMORY
32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) F
(23 views)
K5A3340YBC-T855 (Samsung semiconductor)
Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM
K5A3x40YT(B)C
Document Title
Multi-Chip Package MEMORY
Preliminary MCP MEMORY
32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) F
(23 views)
K6R4008V1C (Samsung semiconductor)
512Kx8 Bit High Speed Static
www.DataSheet4U.com
PRELIMINARY CMOS SRAM
K6R4008V1C-C/C-L, K6R4008V1C-I/C-P
3Document Title
512Kx8 Bit High Speed Static RAM(3.3V Operating). Opera
(23 views)