55-ns Datasheet | Specifications & PDF Download

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N5550/D Amplifier Transistors NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER MAXIMUM RAT

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INTEGRATED CIRCUITS NE/SA/SE5532/5532A Internally-compensated dual low noise operational amplifier Product specification IC11 Data Handbook 1997 Sept

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CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD1555 FOR LOW FREQUENCY R 3DD1555 MAIN CHARACTERISTICS BVCBO IC VCE(sat) tf 1500 V 5A 5 V(max) 1 s(max

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isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain- : hFE=20-70@IC = 4A ·Collector-Emitter Saturation Volta

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isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltage-

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2N3055H 15A Power Transistors Features: • The 2N3055H is a Silicon power base transistor for high power audio, seriespass power supplies, disk-head po

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155 Mbps Bi-directional SC Receptacle Single Fiber Transceiver B-13/15-155-T(3)-SSC 4 Features • Diplexer Single mode, Single Fiber 1x9 SC Receptacle

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770 series Ø45 mm 21-114 W MODEL NO. DESIGNATIONS MOTOR DATA Part name Diameter (mm) Lenth (mm) Nominal voltage (V) Nominal speed (rpm) Nominal torq

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Silicon Epitaxial Planar Transistor EATURES  Collector Current.(IC= 1.5A）  Complementary To SS8050. Pb Lead-free  Collector Dissipation: PC=0.3W

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Rev.1.1_00 HIGH RIPPLE-REJECTION LOW DROPOUT HIGH OUTPUT CURRENT CMOS VOLTAGE REGULATOR www.datasheet4u.com S-1155 Series The S-1155 Series, develo

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isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-hFE=70-140 @IC = 4A ·Collector-Emitter Saturation Voltag

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14118 Stowe Drive, Suite B Poway, CA 92064 TEL: (858) 621-2700 | FAX: (858) 486-1927 URL: www.zcomm.com EMAIL: applications@zcomm.com Voltage-Controll

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2N3055, MJ2955 Complementary Power Transistors Designed for use in general-purpose amplifier and switching applications. Features: • Power dissipation

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155 Mbps Bi-directional Receptacle Single Fiber Transceiver B-13/15-155(C)-T(3)-Sxx3(4) Features • Diplexer Single Mode Single Fiber 1x9 SC/FC/ST Rec

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2SC2655 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2655 Power Amplifier Applications Power Switching Applications Industrial Ap

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors S8550 TRANSISTOR (PNP) FEATURE Power dissipation PCM: 0.62

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155 Mbps Bi-directional SC Receptacle Single Fiber Transceiver B-13/15-155-T(3)-SSC 4 Features • Diplexer Single mode, Single Fiber 1x9 SC Receptacle

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DATA SHEET TRANSIENT VOLTAGE SUPPRESSORS AC/DC POWER SUPPLY 1.5KE-AT series RoHS compliant & Halogen free Product specification– June 30, 2023 V.3 C

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NE5532, SA5532, SE5532, NE5532A, SE5532A Internally Compensated Dual Low Noise Operational Amplifier The 5532 is a dual high-performance low noise op

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