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M27C400 - 4 Mbit 512Kb x8 or 256Kb x16 UV EPROM and OTP EPROM
M27C400 4 Mbit (512Kb x8 or 256Kb x16) UV EPROM and OTP EPROM s 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ACCESS TIME: 55ns BYTE-WIDE or WORD-WIDE CO.M27V201 - 2 Mbit 256Kb x 8 Low Voltage UV EPROM and OTP EPROM
M27V201 2 Mbit (256Kb x 8) Low Voltage UV EPROM and OTP EPROM s LOW VOLTAGE READ OPERATION: 3V to 3.6V FAST ACCESS TIME: 120ns LOW POWER CONSUMPTION:.MCM72CB32 - 256KB and 512KB BurstRAM Secondary Cache Module
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MCM72CB32/D 256KB and 512KB BurstRAM™ Secondary Cache Module for Pentium™ The MCM72CB3.27C2001 - 2 Mbit 256Kb x 8 UV EPROM and OTP EPROM
M27C2001 2 Mbit (256Kb x 8) UV EPROM and OTP EPROM s 5V ± 10% SUPPLY VOLTAGE in READ OPERATION FAST ACCESS TIME: 55ns LOW POWER CONSUMPTION: – Active.R1LV5256ESP-7SR - 256Kb Advanced LPSRAM
R1LV5256E Series 256Kb Advanced LPSRAM (32k word x 8bit) R10DS0068EJ0100 Rev.1.00 2011.04.13 Description The R1LV5256E Series is a family of low volt.FM18L08-70-P - 256Kb 2.7-3.6V Bytewide FRAM Memory
Preliminary FM18L08 256Kb 2.7-3.6V Bytewide FRAM Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • 10 year data.M27W201 - 2 Mbit 256Kb x 8 Low Voltage UV EPROM and OTP EPROM
M27W201 2 Mbit (256Kb x 8) Low Voltage UV EPROM and OTP EPROM s 2.7V to 3.6V LOW VOLTAGE in READ OPERATION ACCESS TIME: – 70ns at VCC = 3.0V to 3.6V .M27C2001 - 2 Mbit (256Kb x 8) UV EPROM and OTP EPROM
M27C2001 2 Mbit (256Kb x 8) UV EPROM and OTP EPROM Features ■ 5V ± 10% supply voltage in Read operation ■ Access time: 55ns ■ Low power consumption: .27C4002 - 4 Mbit 256Kb x16 UV EPROM and OTP EPROM
M27C4002 4 Mbit (256Kb x16) UV EPROM and OTP EPROM 5V ± 10% SUPPLY VOLTAGE in READ OPERATION FAST ACCESS TIME: 45ns LOW POWER CONSUMPTION: – Active Cu.29F002 - 2 Mbit 256Kb x8 / Boot Block Single Supply Flash Memory
M29F002BT M29F002BB, M29F002BNT 2 Mbit (256Kb x8, Boot Block) Single Supply Flash Memory PRELIMINARY DATA s SINGLE 5V ± 10% SUPPLY VOLTAGE for PROGRA.29F200 - 2 Mbit 256Kb x8 or 128Kb x16 / Boot Block Single Supply Flash Memory
M29F200BT M29F200BB 2 Mbit (256Kb x8 or 128Kb x16, Boot Block) Single Supply Flash Memory PRELIMINARY DATA s SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM.FM1808B - 256Kb Bytewide 5V F-RAM Memory
www.DataSheet.co.kr Preliminary FM1808B 256Kb Bytewide 5V F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits.R1LV5256ESA-5SR - 256Kb Advanced LPSRAM
R1LV5256E Series 256Kb Advanced LPSRAM (32k word x 8bit) R10DS0068EJ0100 Rev.1.00 2011.04.13 Description The R1LV5256E Series is a family of low volt.GS70328SJ - 256Kb Asynchronous SRAM
GS70328SJ/TS SOJ, TSOP Commercial Temp Industrial Temp 32K x 8 256Kb Asynchronous SRAM Features • Fast access time: 7, 8, 10, 12, 15 ns • 75/65/50/.GS70328TS - 256Kb Asynchronous SRAM
GS70328SJ/TS SOJ, TSOP Commercial Temp Industrial Temp 32K x 8 256Kb Asynchronous SRAM Features • Fast access time: 7, 8, 10, 12, 15 ns • 75/65/50/.M27C4002 - 4 Mbit (256Kb x16) UV EPROM and OTP EPROM
M27C4002 4 Mbit (256Kb x16) UV EPROM and OTP EPROM Feature summary ■ 5V ± 10% Supply voltage for Read operations ■ Access time: 45ns ■ Low Power c.FM18L08 - 256Kb 2.7-3.6V Bytewide FRAM Memory
Preliminary FM18L08 256Kb 2.7-3.6V Bytewide FRAM Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • 10 year data.FM18L08-70-S - 256Kb 2.7-3.6V Bytewide FRAM Memory
Preliminary FM18L08 256Kb 2.7-3.6V Bytewide FRAM Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • 10 year data.M27V400 - 4 Mbit 512Kb x8 or 256Kb x16 UV EPROM and OTP EPROM
M27V400 4 Mbit (512Kb x8 or 256Kb x16) UV EPROM and OTP EPROM NOT FOR NEW DESIGN s s M27V400 is replaced by the M27W400 3V to 3.6V LOW VOLTAGE in REA.M27V402 - 4 Mbit 256Kb x 16 Low Voltage UV EPROM and OTP EPROM
M27V402 4 Mbit (256Kb x 16) Low Voltage UV EPROM and OTP EPROM s LOW VOLTAGE READ OPERATION: 3V to 3.6V FAST ACCESS TIME: 120ns LOW POWER CONSUMPTION.