5N20A Datasheet | Specifications & PDF Download

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GOFORD Description Features VDSS RDS(ON) ID @ 10V(Typ) 200V 0.44 Ω 5A • Fast switching • 100% avalanche tested • Improved dv/dt capability • Ro

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Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology www.DataSheet4U.com SSP45N20A BVDSS = 200 V RDS(on) = 0.065 Ω

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N R N-CHANNEL MOSFET JCS65N20ABT MAIN CHARACTERISTICS Package ID 65A VDSS 200 V Rdson（@Vgs=10V） 25mΩ Qg 120nc   UPS APPLICATIONS  High f

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Silicon N-Channel Power MOSFET CS5N20 A3 ○R General Description： CS5N20 A3, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-alig

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www.DataSheet4U.com Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Cha

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45MHZ SERIES MCF s Features 8 Compactness and light weight 8 Excellent design against shock/vibration 8 Low impedance s 45MHz Fundamental Model 45S1

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AGM65N20AT ● General Description The AGM65N20AT combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS

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