GOFORD Description Features VDSS RDS(ON) ID @ 1.
45N20A - CRYSTAL FILTERS
45MHZ SERIES MCF s Features 8 Compactness and light weight 8 Excellent design against shock/vibration 8 Low impedance s 45MHz Fundamental Model 45S1.
Samsung Electronics
45N20A - SSF45N20A
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JILIN SINO-MICROELECTRONICS
JCS65N20ABT - N-CHANNEL MOSFET
N R N-CHANNEL MOSFET JCS65N20ABT MAIN CHARACTERISTICS Package ID 65A VDSS 200 V Rdson（@Vgs=10V） 25mΩ Qg 120nc UPS APPLICATIONS High f.5N20A - MOSFET
GOFORD Description Features VDSS RDS(ON) ID @ 10V(Typ) 200V 0.44 Ω 5A • Fast switching • 100% avalanche tested • Improved dv/dt capability • Ro.
Huajing Microelectronics
CS5N20A3 - Silicon N-Channel Power MOSFET
Silicon N-Channel Power MOSFET CS5N20 A3 ○R General Description： CS5N20 A3, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-alig.
Samsung Electronics
SSF45N20A - Advanced Power MOSFET
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Fairchild Semiconductor
SSH45N20A - Advanced Power MOSFET
www.DataSheet4U.com Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Cha.AGM65N20AT - MOSFET
AGM65N20AT ● General Description The AGM65N20AT combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS.
Fairchild Semiconductor
SSP45N20A - advanced power MOSFET
Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology www.DataSheet4U.com SSP45N20A BVDSS = 200 V RDS(on) = 0.065 Ω.
