5N60 Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor INCHANGE Semiconductor 5N60 ·DESCRIPTION ·Drain Current ID= 5.6A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Fa

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www.DataSheet4U.com FQB5N60C / FQI5N60C FQB5N60C / FQI5N60C 600V N-Channel MOSFET QFET TM General Description These N-Channel enhancement mode pow

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UNISONIC TECHNOLOGIES CO., LTD 15N60 15 Amps, 600 Volts N-CHANNEL MOSFET „ DESCRIPTION Preliminary Power MOSFET The UTC 15N60 is an N-channel mode

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 25N60 ·FEATURES ·Drain Current ID= 25A@ TC=25℃ ·Drain Source Voltag

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5N60/F5N60/I5N60/E5N60/B5N60/D5N60 5A 600V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanced VDMOSFETs, is obtained by t

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600V N-Channel MOSFET GENERAL DESCRIPTION This Power MOSFET is produced using Truesemi’s advanced planar stripe, DMOS technology.This latest technolog

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5N60/F5N60/I5N60/E5N60/B5N60/D5N60 5A 600V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanced VDMOSFETs, is obtained by t

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SPP15N60C3, SPI15N60C3 SPA15N60C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS @ Tjmax

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SVF5N60T/F/D/MJ_Datasheet 5A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF5N60T/F/D/MJ is an N-channel enhancement mode power MOS field effect transi

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5N60/F5N60/I5N60/E5N60/B5N60/D5N60 5A 600V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanced VDMOSFETs, is obtained by t

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SEMICONDUCTOR TECHNICAL DATA KGT15N60FDA General Description KEC NPT Trench IGBTs offer low switching losses, high energy efficiency and high avala

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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current ID= 15A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance :

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Free Datasheet http://www.Datasheet4U.com FHF5N60 FHF5N60 N MOS 。AC-DC ， DC-DC，HPMW。 ★ 5A,600V，RDS(on)(）1.97Ω ★ 、 ★ （TC =25℃） — @TC=25℃ @TC=

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IGB15N60T TRENCHSTOP™ Series q Low Loss IGBT : IGBT in TRENCHSTOP™ and Fieldstop technology C Features:  Very low VCE(sat) 1.5V (typ.)  Maximum

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CoolMOSTM Power Transistor Features • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv /dt ra

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FQP15N60/FQPF15N60 600V 15A Super Junction MSFET General Description Product Summary The FQP15N60& FQPF15N60 have been fabricated using the advance

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SKP15N60 SKW15N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75% lower Eoff compared to previous generation comb

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FGPF15N60UNDF — 600 V, 15 A Short Circuit Rated IGBT FGPF15N60UNDF 600 V, 15 A Short Circuit Rated IGBT Features • Short Circuit Rated 10us • High Cu

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SEMICONDUCTOR 5N60 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET (5A, 600Volts) DESCRIPTION The Nell 5N60 is a three-terminal sili

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Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-powe

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