5N90 Datasheet | Specifications & PDF Download

PFU5N90G / PFD5N90G FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarka

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 5N90 ·DESCRIPTION ·Drain Current ID= 5A@ TC=25℃ ·Drain Source Volta

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HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK25N90 IXFX25N90 IXFK26N90 IXFX26N90 Symbol VDSS VDGR VG

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www.DataSheet4U.com HiPerFETTM Power MOSFETs IXFN 26N90 Single Die MOSFET IXFN 25N90 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr

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Features • High blocking voltage with low On-resistance • • High Fast isnptreinesdicswdiiotcdheinwgitwhitlohwlorwevcearpseacrie tca on vc ee rsy (

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FQAF5N90 September 2000 QFET FQAF5N90 900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are

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HMS5N90/HMS5N90F N-Channel Super Junction Power MOSFET Ⅲ General Description The series of devices use advanced trench gate super junction technolog

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Silicon N-Channel Power MOSFET ○R CS5N90 A8R General Description： VDSS 900 CS5N90 A8R, the silicon N-channel Enhanced ID 5 VDMOSFETs, is obtai

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PFU5N90G / PFD5N90G FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarka

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HMS5N90/HMS5N90F N-Channel Super Junction Power MOSFET Ⅲ General Description The series of devices use advanced trench gate super junction technolog

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HMS5N90R N-Channel Super Junction Power MOSFET Ⅲ General Description The series of devices use advanced trench gate super junction technology and de

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UNISONIC TECHNOLOGIES CO., LTD 5N90 5A, 900V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 5N90 is a N-channel mode power MOSFET using UTC’s advanced t

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FQB5N90 — N-Channel QFET® MOSFET FQB5N90 N-Channel QFET® MOSFET 900 V, 5.4 A, 2.3 Ω Features • 5.4 A, 900 V, RDS(on) = 2.3 Ω (Max.) @ VGS = 10 V,

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Silicon N-Channel Power MOSFET ○R CS5N90 A4R General Description： CS5N90 A4R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-ali

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HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK25N90 IXFX25N90 IXFK26N90 IXFX26N90 Symbol VDSS VDGR VG

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Silicon N-Channel Power MOSFET CS5N90 ARH-G ○R General Description： CS5N90 ARH-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the sel

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