60.00 Datasheet | Specifications & PDF Download

Silan Microelectronics SGT60N60FD1PN/P7/PS/PT_Datasheet 60A, 600V FIELD STOP IGBT DESCRIPTION SGT60N60FD1PN/P7/PS/PT adopts Field Stop IGBT technolog

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SGT40N60NPFDPN_Datasheet 40A, 600V FIELD STOP IGBT DESCRIPTION SGT40N60NPFDPN using Field Stop IGBT technology, offer the optimum performance for indu

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MMD70R600P Datasheet MMD70R600P 700V 0.6Ω N-channel MOSFET  Description MMD70R600P is power MOSFET using magnachip’s advanced super junction technol

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Product specification 16A TRIACS GENERAL DESCRIPTION BTA/BTB16-600BW Available either in through-hole or surface-mount packages, the BTA/BTB16 - 6

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MOSFET 600V 200A IGBT Número de parte: GT30J127 Descripción: IGBT PARA APLICACIONES DE PANTALLAS DE TELEVISION DE PLASMA TO-220 Voltaje: 600V Corrient

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Elektronische Bauelemente SMBJ Series Voltage 5V ~ 440V 600W Peak Power Surface Mount TVS RoHS Compliant Product A suffix of “-C” specifies halogen-

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Elektronische Bauelemente SMBJ Series Voltage 5V ~ 440V 600W Peak Power Surface Mount TVS RoHS Compliant Product A suffix of “-C” specifies halogen-

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25A TRIACS TIGER ELECTRONIC CO.,LTD Product specification BTA/BTB26-600B GENERAL DESCRIPTION Available either in through-hole or surface-mount packa

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Low Dropout Voltage High PSRR 500mA CMOS LDO Regulator Si CE6260 Low Dropout Voltage High PSRR 500mA CMOS LDO Regulator CE6260 Series „ INTRODUCTI

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BTA12, BTB12, T12xx 12 A Snubberless™, logic level and standard Triacs Datasheet - production data Features  Medium current Triac  Low thermal re

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www.DataSheet4U.com FQB5N60C / FQI5N60C FQB5N60C / FQI5N60C 600V N-Channel MOSFET QFET TM General Description These N-Channel enhancement mode pow

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IPD70R600P7S MOSFET 700V CoolMOSª P7 Power Transistor CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to th

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6MBP200RA060 IGBT-IPM R series Features · Temperature protection provided by directly detecting the junction temperature of the IGBTs · Low power loss

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T4 series 4 A Triacs $ * $ $ Datasheet  production data . Table 1. Main characteristics Symbol Value Unit IT(rms) 4 A VDRM, VRRM 600

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FGL60N100BNTD — 1000 V, 60 A NPT Trench IGBT FGL60N100BNTD 1000 V, 60 A NPT Trench IGBT Features • High Speed Switching • Low Saturation Voltage: VCE

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ShenZhenHanKingyuan Electronic CO.,Ltd 01. TRIACs BTA100 Series 3 Quadrants 1 2 3 ITO-247 Insulated FEATURES IT(RMS):100A VGT: 1.5V VDRM VRRM:1200

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1N5985A - 1N6031A VZ : 2.4 - 200 V PD : 500 mW FEATURES : * Extensive selection from 2.0 V to 200 V * Standard zener voltage tolerance is ± 10%. * Oth

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20N60/F20N60/20N60D 20A 600V N-channel Enhancement Mode Power MOSFET 1 Description These silicon N-channel Enhanced VDMOSFETs are obtained by the sel

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