630A Datasheet | Specifications & PDF Download

Silicon N-Channel Power MOSFET CS630 A4H ○R General Description： CS630 A4H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligne

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AMT630A Video Display Controller (Product Specification) Version 1.1 2014.10 2014-09 1 AMT630A Specification (V1.0) Revision Record: Date 2014-09

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WLA13-3630A 1.3- 1.4 GHz ULTRA LOW NOISE AMPLIFIER REV A April 2018 Key Features Product Description  50 Ohm Impedance  1.3 ~ 1.4 GHz  0.30 dB

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INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRF630A DESCRIPTION ·Drain Current –ID=9A@ TC=25℃ ·Drain Source V

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFS630A FEATURES ·Avalanche Rugged Technology ·Rugged Gate Oxide T

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N R N-CHANNEL MOSFET JCS630A MAIN CHARACTERISTICS Package ID 9.0 A VDSS 200 V Rdson（Vgs=10V） 0.4 Ω Qg 22 nC APPLICATIONS z High efficiency swit

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JIEJIE MICROELECTRONICS CO. , Ltd JCT630/830 Series 30A SCRs Rev.3.0 DESCRIPTION: JCT630/830 series of silicon controlled rectifiers, with high ab

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630AT N-Channel Enhancement Mode Power MOSFET Description The 630AT uses advanced trench technology to provide excellent RDS(ON) , low gate charge.

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Silicon N-Channel Power MOSFET ○R CS630 A4R General Description： CS630 A4R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-ali

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FDD6630A July 1999 ADVANCE INFORMATION FDD6630A N-Channel PowerTrenchTM MOSFET General Description This N-Channel Logic level MOSFET is produced usi

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Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Ope

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GOFORD Description Features VDSS RDS(ON) ID @ 10V (typ) 200V 0.21Ω 9A • Fast switching • 100% avalanche tested • Improved dv/dt capability Applic

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AX6630/A 1.2A High Output Current LDO Regulator  GENERAL DESCRIPTION The AX6630/A is a low noise, high output current, low quiescent current and low

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S-19630A www.ablic.com © ABLIC Inc., 2018-2019 AUTOMOTIVE, 125°C OPERATION, LOW INPUT OFFSET VOLTAGE CMOS OPERATIONAL AMPLIFIER Rev.1.1_00 This IC

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CONDUCTIVE POLYMER HYBRID ALUMINUM ELECTROLYTIC CAPACITORS Surface Mount HXCSeries ・High reliability and high voltage are realized by hybrid electrol

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HFP630A Jan 2016 HFP630A 200V N-Channel MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technolo

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1N5629(A)-1N5665(A) High-reliability discrete products and engineering services since 1977 Transient Voltage Suppressor 1500 Watt FEATURES:  Avail

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FDS6630A April 1999 FDS6630A N-Channel Logic Level PowerTrenchTM MOSFET General Description This N-Channel Logic Level MOSFET is produced using Fair

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HFD630A_HFU630A August 2015 HFD630A / HFU630A 200V N-Channel MOSFET BVDSS = 200 V RDS(on) typ ȍ ID = 9.0 A FEATURES ‰ Originative New Desig

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Silicon N-Channel Power MOSFET CS630 A8H ○R General Description： CS630 A8H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligne

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