64-Mbit Datasheet | Specifications & PDF Download

64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O Document Title 4Bank x 1M x 16bits Synchronous DRAM Revision History Revision No. 0.1 History Initi

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M27C1024 1 Mbit (64Kb x16) UV EPROM and OTP EPROM 5V ± 10% SUPPLY VOLTAGE in READ OPERATION FAST ACCESS TIME: 35ns LOW POWER CONSUMPTION: – Active Cur

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K4S640432D CMOS SDRAM 64Mbit SDRAM 4M x 4Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 June 1999 * Samsung Electronics reserves the right to c

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M58LV064A M58LV064B 64 Mbit (4Mb x16 or 2Mb x32, Uniform Block, Burst) 3V Supply Flash Memories PRELIMINARY DATA FEATURES SUMMARY s WIDE DATA BUS for

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www.DataSheet4U.com M50FLW080A M50FLW080B 8-Mbit (13 x 64-Kbyte Blocks + 3 × 16 × 4 Kbyte Sectors) 3-V supply, Firmware Hub / low-pin-count Flash mem

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NAND128-A, NAND256-A NAND512-A, NAND01G-A 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories FEATURES

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SST26VF064B / SST26VF064BA 2.5V/3.0V 64 Mbit Serial Quad I/O (SQI) Flash Memory Features • Single Voltage Read and Write Operations - 2.7-3.6V or 2.

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SST38VF6401B / SST38VF6402B SST38VF6403B / SST38VF6404B 64 Mbit (x16) Advanced Multi-Purpose Flash Plus Features • Organized as 4M x16 • Single Volta

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S25FL064L 64-Mbit (8-Mbyte) 3.0 V FL-L SPI Flash Memory General Description The Cypress FL-L Family devices are Flash Non-volatile Memory products us

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www.DataSheet4U.com M28W320FST, M28W320FSB, M28W640FSB, M28W640FST 32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Boot Block, Secure Flash Memories

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SST26VF064B / SST26VF064BA 2.5V/3.0V 64 Mbit Serial Quad I/O (SQI) Flash Memory Features • Single Voltage Read and Write Operations - 2.7-3.6V or 2.

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SST38VF6401B / SST38VF6402B SST38VF6403B / SST38VF6404B 64 Mbit (x16) Advanced Multi-Purpose Flash Plus Features • Organized as 4M x16 • Single Volta

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SST38VF6401B / SST38VF6402B SST38VF6403B / SST38VF6404B 64 Mbit (x16) Advanced Multi-Purpose Flash Plus Features • Organized as 4M x16 • Single Volta

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K4S640832F CMOS SDRAM 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL Revision 1.1 May. 2003 * Samsung Electronics reserves the right to c

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MOSEL VITELIC V54C3256(16/80/40)4V(T/S/B) 256Mbit SDRAM 3.3 VOLT, TSOP II / SOC BGA / WBGA PACKAGE 16M X 16, 32M X 8, 64M X 4 PRELIMINARY 6 System

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HYR16xx40G / HYR18xx40G Rambus RIMM Modules Direct RDRAM RIMM Modules (with 288 Mbit RDRAMs) Overview The Direct Rambus™ RIMM™ module is a general pu

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M29F100T M29F100B 1 Mbit (128Kb x8 or 64Kb x16, Boot Block) Single Supply Flash Memory 5V ± 10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS

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Numonyx® P33-65nm Flash Memory 128-Mbit, 64-Mbit Single Bit per Cell (SBC) Product Features Datasheet „ High performance: „ Security: — 60ns initi

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M27C1024 1 Mbit (64Kb x16) UV EPROM and OTP EPROM 5V ± 10% SUPPLY VOLTAGE in READ OPERATION FAST ACCESS TIME: 35ns LOW POWER CONSUMPTION: – Active Cur

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www.DataSheet4U.com K4Y50164UC K4Y50084UC K4Y50044UC K4Y50024UC XDRTM DRAM 512Mbit XDR TM DRAM(C-die) Revision 1.1 August 2006 INFORMATION IN T

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