64-Mbit Datasheet | Specifications & PDF Download

M36WT864TF M36WT864BF 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512K x16) SRAM, Multiple Memory Product PRODUCT PREVIEW FEATUR

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M36WT864TF M36WT864BF 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512K x16) SRAM, Multiple Memory Product PRODUCT PREVIEW FEATUR

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64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O Document Title 4Bank x 1M x 16bits Synchronous DRAM Revision History Revision No. 0.1 History Initi

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M27C1024 1 Mbit (64Kb x16) UV EPROM and OTP EPROM 5V ± 10% SUPPLY VOLTAGE in READ OPERATION FAST ACCESS TIME: 35ns LOW POWER CONSUMPTION: – Active Cur

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M58WR064ET M58WR064EB 64 Mbit (4Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory FEATURES SUMMARY s SUPPLY VOLTAGE – VDD = 1.65V to 2.2V for Pr

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S25FL064L 64-Mbit (8-Mbyte) 3.0 V FL-L SPI Flash Memory General Description The Cypress FL-L Family devices are Flash Non-volatile Memory products us

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MOSEL VITELIC V54C3128(16/80/40)4V(T/S) 128Mbit SDRAM 3.3 VOLT, TSOP II / SOC PACKAGE 8M X 16, 16M X 8, 32M X 4 PRELIMINARY 6 System Frequency (fCK

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w w w . D a t a S h e e t 4 U . c o m V54C365(16/80/40)4VE 64Mbit SDRAM 3.3 VOLT, TSOP II / FBGA 4M X 16, 8M X 8, 16M X 4 6 System Frequency (fCK) C

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www.DataSheet4U.com M28W320FST, M28W320FSB, M28W640FSB, M28W640FST 32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Boot Block, Secure Flash Memories

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CY7C1212F www.DataSheet4U.com 1-Mbit (64K x 18) Pipelined Sync SRAM Features • Registered inputs and outputs for pipelined operation • 64K × 18 commo

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K4S640832E CMOS SDRAM 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 Sept. 2001 * Samsung Electronics reserves the right to

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M29DW640D 64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory FEATURES SUMMARY ■ ■ ■ SUPPLY VOLTAGE – VCC = 2.7V to

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M59PW1282 128Mbit (two 64Mb, x16, Uniform Block, LightFlash™) 3V Supply, Multiple Memory Product FEATURES SUMMARY ■ MASK-ROM PIN-OUT COMPATIBLE ■ Fig

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K4S640832D CMOS SDRAM 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 June 1999 * Samsung Electronics reserves the right to c

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K4S640832E CMOS SDRAM 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 Sept. 2001 * Samsung Electronics reserves the right to

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MOSEL VITELIC V58C2256(804/404/164)S HIGH PERFORMANCE 2.5 VOLT 256 Mbit DDR SDRAM 4 BANKS X 8Mbit X 8 (804) 4 BANKS X 4Mbit X 16 (164) 4 BANKS X 16Mb

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www.DataSheet4U.com M28W320FST, M28W320FSB, M28W640FSB, M28W640FST 32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Boot Block, Secure Flash Memories

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PRODUCT SPECIFICATION www.DataSheet4U.com Integrated Circuits Group LH28F640BFHE-PBTL70A Flash Memory 64Mbit (4Mbitx16) (Model Number: LHF64FG8 Spec

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M29W640GH M29W640GL M29W640GT M29W640GB 64-Mbit (8 Mbit x8 or 4 Mbit x16, uniform block or boot block) 3 V supply flash memory Feature „ Supply volta

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MOSEL VITELIC V54C3256(16/80/40)4V(T/S/B) 256Mbit SDRAM 3.3 VOLT, TSOP II / SOC BGA / WBGA PACKAGE 16M X 16, 32M X 8, 64M X 4 PRELIMINARY 6 System

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