6N60-P Datasheet | Specifications & PDF Download

HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200402 Issued Date : 2004.04.01 Revised Date : 2005.05.12 Page No. : 1/6 H06N60 Series N-Channel

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SKP06N60 SKA06N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode  75% lower Eoff compared to previous g

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INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification 6N60 ·FEATURES ·Drain Current –ID= 6A@ TC=25℃ ·Drain Source Voltage

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6N60 Power Mosfet 6.2 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The 6N60 is a high voltage MOSFET and is designed to have better characteristi

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SEMICONDUCTOR 16N60 Series RoHS RoHS Nell High Power Products N-Channel Power MOSFET (16A, 600Volts) DESCRIPTION The Nell 16N60 is a three-termin

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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200402 Issued Date : 2004.04.01 Revised Date : 2005.05.12 Page No. : 1/6 H06N60 Series N-Channel

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BRF6N60-VB BRF6N60-VB Datasheet /$IBOOFM
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%4 Power MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg max. (nC

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Advance Technical Information GenX3TM 600V IGBT IXGH56N60B3* *Obsolete Part Number VCES = IC110 = VCE(sat) ≤ 600V 56A 1.80V Medium-Speed Low Vsat

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Advance Technical Information GenX3TM 600V IGBT IXGH36N60B3 Medium-Speed Low-Vsat PT IGBT for 5 - 40kHz Switching VCES = IC110 = VCE(sat) ≤ 60

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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200402 Issued Date : 2004.04.01 Revised Date : 2005.05.12 Page No. : 1/6 H06N60 Series N-Channel

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Advance Technical Information GenX3TM 600V IGBT IXGH56N60A3 VCES = IC110 = VCE(sat) ≤ 600V 56A 1.35V Ultra-Low Vsat PT IGBT for up to 5 kHz Switc

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HiPerFASTTM IGBTs C2-Class High Speed w/ Diode IXGA16N60C2D1 IXGP16N60C2D1 IXGH16N60C2D1 VCES = IC110 = VCE(sat) ≤ tfi(typ) = 600V 16A 3.0V 33ns T

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IKD06N60RC2 TRENCHSTOPTM RC-Series for hard switching applications Cost effective monolithically integrated IGBT with Diode Features: TRENCHSTOPTM

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6N60(F,B,H) 6A mps,600 Volts N-CHANNEL MOSFET FEATURE  6A,600V,RDS(ON)=1.2Ω@VGS=10V/3A  Low gate charge  Low Ciss  Fast switching  100% avalan

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HiPerFASTTM IGBTs C2-Class High Speed w/ Diode IXGA16N60C2D1 IXGP16N60C2D1 IXGH16N60C2D1 VCES = IC110 = VCE(sat) ≤ tfi(typ) = 600V 16A 3.0V 33ns T

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I06N60T-VB I06N60T-VB Datasheet /$IBOOFM
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%4 Power MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg max. (nC

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WML26N60C2, WMK26N60C2 WMN26N60C2, WMM26N60C2, WMJ26N60C2 600V 0.16Ω Super Junction Power MOSFET Description WMOSTM C2 is Wayon’s 2nd generation supe

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PHX6N60E-VB PHX6N60E-VB Datasheet /$IBOOFM
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%4 Power MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg max. (

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DataSheet.in FQP6N60 April 2000 QFET FQP6N60 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transist

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WML26N60C2, WMK26N60C2 WMN26N60C2, WMM26N60C2, WMJ26N60C2 600V 0.16Ω Super Junction Power MOSFET Description WMOSTM C2 is Wayon’s 2nd generation supe

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