6N70 Datasheet | Specifications & PDF Download

SW6N70DB-VB TO252 SW6N70DB-VB TO252 Datasheet N-Channel 600V (D-S) Super Junction Power MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) at TJ max. RD

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 6N70 ·FEATURES ·Drain Current ID= 6A@ TC=25℃ ·Drain Source Voltage-

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Advanced Power MOSFET w w w .D t a FEATURES h S a t e e 4U . m o c SSS6N70A BVDSS = 700 V RDS(on) = 1.8 Ω ID = 4 A TO-220F Avalanche Rugged

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N R N-CHANNEL MOSFET JCS6N70C MAIN CHARACTERISTICS Package ID 6.0 A VDSS 700 V Rdson（@Vgs=10V） 1.6 Ω Qg 31 nC z z z UPS APPLICATIONS z Hig

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HFS6N70U HFS6N70U 700V N-Channel MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Ver

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N R N-CHANNEL MOSFET JCS6N70C MAIN CHARACTERISTICS Package ID VDSS Rdson-max （@Vgs=10V） Qg-typ    UPS 6.0 A 700 V 1.6 Ω 31 nC APPLICA

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PFU6N70EG FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switch

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UNISONIC TECHNOLOGIES CO., LTD 6N70 6.0A, 700V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 6N70 is an N-channel mode power MOSFET using UTC’s advance

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N R N-CHANNEL MOSFET JCS6N70C MAIN CHARACTERISTICS Package ID VDSS Rdson-max （@Vgs=10V） Qg-typ    UPS 6.0 A 700 V 1.6 Ω 31 nC APPLICA

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N R N-CHANNEL MOSFET JCS6N70C MAIN CHARACTERISTICS Package ID 6.0 A VDSS 700 V Rdson（@Vgs=10V） 1.6 Ω Qg 31 nC z z z UPS APPLICATIONS z Hig

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N R N-CHANNEL MOSFET JCS6N70C MAIN CHARACTERISTICS Package ID 6.0 A VDSS 700 V Rdson（@Vgs=10V） 1.6 Ω Qg 31 nC z z z UPS APPLICATIONS z Hig

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N R N-CHANNEL MOSFET JCS6N70C MAIN CHARACTERISTICS Package ID 6.0 A VDSS 700 V Rdson（@Vgs=10V） 1.6 Ω Qg 31 nC z z z UPS APPLICATIONS z Hig

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor 6N70A ·FEATURES ·Drain Current ID= 6A@ TC=25℃ ·Drain Source Voltage : VDSS= 700V(Min) ·Avalan

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MDIB6N70C N-channel MOSFET 700V MDIB6N70C N-Channel MOSFET 700V, 5.0A, 1.8Ω General Description The MDIB6N70C use advanced Magnachip’s MOSFET Techno

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UNISONIC TECHNOLOGIES CO., LTD 6N70-P 6A, 700V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 6N70-P is a N-channel mode power MOSFET using UTC’s advanc

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6N70(F,B,H,G,D)S 6 Amps,700 Volts Super Junction N-CHANNEL MOSFET FEATURE  6A,700V,RDS(ON)MAX=0.95Ω @VGS=10V/3A  Low gate charge  Low Ciss  Fas

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UNISONIC TECHNOLOGIES CO., LTD 6N70-ML 6.0A, 700V N-CHANNEL POWER MOSFET 1 Power MOSFET 1  DESCRIPTION The UTC 6N70-ML is a high voltage power MOSF

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Silicon N-Channel Power MOSFET CS6N70 A3D-G ○R General Description： CS6N70 A3D-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the sel

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