6N70 Datasheet | Specifications & PDF Download

Silicon N-Channel Power MOSFET CS6N70F B9D ○R General Description： CS6N70F B9D, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-al

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Silicon N-Channel Power MOSFET ○R CS6N70 A4R-G General Description： CS6N70 A4R-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the se

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DG6N70 N N-CHANNEL ENHANCEMENT MODE MOSFET ：V1.0 General Description DG6N70N，， ，，，。 ，，。 DG6N70 is an N-channel enhancement mode MOSFET, which is

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GPT06N70 / GPT06N70D POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination scheme to pro

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Silicon N-Channel Power MOSFET CS6N70 B3D1-G ○R General Description： CS6N70 B3D1-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the s

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N R N-CHANNEL MOSFET JCS6N70C MAIN CHARACTERISTICS Package ID VDSS Rdson-max （@Vgs=10V） Qg-typ    UPS 6.0 A 700 V 1.6 Ω 31 nC APPLICA

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N R N-CHANNEL MOSFET JCS6N70C MAIN CHARACTERISTICS Package ID 6.0 A VDSS 700 V Rdson（@Vgs=10V） 1.6 Ω Qg 31 nC z z z UPS APPLICATIONS z Hig

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N R N-CHANNEL MOSFET JCS6N70C MAIN CHARACTERISTICS Package ID 6.0 A VDSS 700 V Rdson（@Vgs=10V） 1.6 Ω Qg 31 nC z z z UPS APPLICATIONS z Hig

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N R N-CHANNEL MOSFET JCS6N70C MAIN CHARACTERISTICS Package ID 6.0 A VDSS 700 V Rdson（@Vgs=10V） 1.6 Ω Qg 31 nC z z z UPS APPLICATIONS z Hig

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HFN6N70U HFN6N70U 700V N-Channel MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Ver

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N-Channel MOSFET Applications: ● Adaptor ● Charger ● SMPS Features: ● RoHS Compliant ● Low ON Resistance ● Low Gate Charge ● Peak Current vs Pulse Wi

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N R N-CHANNEL MOSFET JCS6N70C MAIN CHARACTERISTICS Package ID 6.0 A VDSS 700 V Rdson（@Vgs=10V） 1.6 Ω Qg 31 nC z z z UPS APPLICATIONS z Hig

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N R N-CHANNEL MOSFET JCS6N70C MAIN CHARACTERISTICS Package ID 6.0 A VDSS 700 V Rdson（@Vgs=10V） 1.6 Ω Qg 31 nC z z z UPS APPLICATIONS z Hig

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N R N-CHANNEL MOSFET JCS6N70C MAIN CHARACTERISTICS Package ID 6.0 A VDSS 700 V Rdson（@Vgs=10V） 1.6 Ω Qg 31 nC z z z UPS APPLICATIONS z Hig

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SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse rec

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N R N-CHANNEL MOSFET JCS6N70C MAIN CHARACTERISTICS Package ID VDSS Rdson-max （@Vgs=10V） Qg-typ    UPS 6.0 A 700 V 1.6 Ω 31 nC APPLICA

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GPT06N70 / GPT06N70D POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination scheme to pro

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FQA6N70 December 2000 QFET FQA6N70 700V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are pro

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Silicon N-Channel Power MOSFET CS6N70 A3D1-G ○R General Description： CS6N70 A3D1-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the s

(12 views)