700-FS Datasheet | Specifications & PDF Download

NJU7007/08 LOW POWER AND LOW OFFSET VOLTAGE SUPER SMALL-SIZED SINGLE C-MOS OPERATIONAL AMPLIFIER ■GENERAL DESCRIPTION The NJU7007/08 are super small

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Allen-Bradley DIN Rail Timing Relays 700-FS High Performance Timing Relays for DIN Rail Mounting Type Designation Allen-Bradley Solid State Relays fo

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FSFR-Series — Fairchild Power Switch (FPS™) for Half-Bridge Resonant Converter June 2010 FSFR-Series — Fairchild Power Switch (FPS™) for Half-Bridge

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CPM3-1700-R020E. 1 CPM3-1700-R020E Wolfspeed SiC Gen 3 MOSFET Description This is the Wolfspeed’s 3rd generation of high performance silicon carbid

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Bulletin 700 Relays and Timers Product Overview Relay Selection Bulletin Type 700-HA General Purpose Relay Pin Style Terminals, Standard ON/OFF Fl

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AF70XXM series Low Power Voltage Detector Features  Low power consumption  Low temperature coefficient  Built-in hysteresis characteristic  High

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SSM3K7002BFS TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ) SSM3K7002BFS High-Speed Switching Applications Analog Switch Applica

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Power Switch for Half-Bridge Resonant Converters DATA SHEET www.onsemi.com FSFR-XS Series SIP9 26x10.5 CASE 127EM Description The FSFR−XS series i

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CPW6-1700-Z005A Gen 6 Silicon Carbide Schottky Diode Description This is the 6th generation of high voltage, high performace Z-Rec© silicon carbide Sc

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E3M0900170J 1700V 900mΩ Silicon Carbide Power MOSFET N-Channel Enhancement Mode Features • High blocking voltage with low on-resistance • High-speed

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C3M0900170D 1700V 900mΩ Silicon Carbide Power MOSFET N-Channel Enhancement Mode Features • High blocking voltage with low on-resistance • High-spee

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FSFR-US Series — Fairchild Power Switch (FPS™) for Half-Bridge Resonant Converter May 2010 FSFR-US Series — Fairchild Power Switch (FPS™) for Half-B

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NJU7007/08 LOW POWER AND LOW OFFSET VOLTAGE SUPER SMALL-SIZED SINGLE C-MOS OPERATIONAL AMPLIFIER ■GENERAL DESCRIPTION The NJU7007/08 are super small

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E3M0900170D 1700V 900mΩ Silicon Carbide Power MOSFET N-Channel Enhancement Mode Features • High blocking voltage with low on-resistance • High-speed

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C3M0900170J 1700V 900mΩ Silicon Carbide Power MOSFET N-Channel Enhancement Mode Features • High blocking voltage with low on-resistance • High-speed

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SSC7002EGS6 N-channel Small Switching MOSFET  Features  VDS 60V VGS ±20V RDSon TYP 2R@10V 3R@4V5 ID 300mA ESD 3kV   General Description

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FSFR-US Series — Fairchild Power Switch (FPS™) for Half-Bridge Resonant Converter May 2010 FSFR-US Series — Fairchild Power Switch (FPS™) for Half-B

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PRODUCT SPECIFICATION Doc. Number: ¡¼ ¡¼ ¡½ Tentative Specification Preliminary Specification Approval Specification MODEL NO.: N116BGE SUFFIX: L41

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GTVA107001EC/FC High Power RF GaN on SiC HEMT 700 W, 50 V, DC - 1.4 GHz Description The GTVA107001EC and GTVA107001FC are 700-watt GaN on SiC high el

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PTRA087008NB Thermally-Enhanced High Power RF LDMOS FET 650 W, 48 V, 755 – 805 MHz Description The PTRA087008NB is a 650-watt LDMOS FET. It is designe

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