7000 Datasheet | Specifications & PDF Download

3M™ EMI Absorber AB7000 Series Data Sheet Description February 2009 3M™ EMI Absorber AB7000 Series consists of a flexible polymer resin loaded with s

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HFX7000-200 Fiber Optic Component 50 Mbps, 650 nm LED DESCRIPTION The HFX7000-200 is a 50 Mbps LED designed to meet data transmission requirements in

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DISCRETE SEMICONDUCTORS DATA SHEET 2N7000 N-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconducto

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N7000/D TMOS FET Transistor N–Channel — Enhancement 3 DRAIN 2 GATE 1 SOURCE 2N7000 M

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2N7000 N-Channel Enhancement-Mode Vertical DMOS FET Features • Free from Secondary Breakdown • Low Power Drive Requirement • Ease of Paralleling • L

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N-Channel Enhancement Mode Field Effect Transistor 2N7000, 2N7002, NDS7002A Description These N−channel enhancement mode field effect transistors are

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2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Part Number 2N7000 2N7002 VQ1000J VQ1000P BS170 60 V(B

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Zener Diodes MAZ7000 Series Silicon planar type Unit : mm For stabilization of power supply φ 0.65 max. • Large power dissipation Ptot (800 mW) • A

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LTC7000/LTC7000-1 Fast 150V Protected High Side NMOS Static Switch Driver FEATURES n Wide Operating VIN: 3.5V to 135V (150V Abs Max) n 1Ω Pull-Down,

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2N7000G Small Signal MOSFET 200 mAmps, 60 Volts N−Channel TO−92 Features • AEC Qualified • PPAP Capable • This is a Pb−Free Device* MAXIMUM RATINGS

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2N7000 / 2N7002 / NDS7002A — N-Channel Enhancement Mode Field Effect Transistor August 2016 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Fi

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SEMICONDUCTOR TECHNICAL DATA INTERFACE AND SWITCHING APPLICATION. FEATURES High density cell design for low RDS(ON). Voltage controlled small signal s

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2N7000 2N7002 N-channel 60 V, 1.8 Ω, 0.35 A, SOT23-3L, TO-92 STripFET™ Power MOSFET Features Type VDSS RDS(on) max ID 2N7000 )2N7002 60 V 60 V

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TSM2N7000 60V N-Channel MOSFET SOT-92 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY VDS (V) RDS(on)(Ω) 60 5 @ VGS = 10V ID (mA) 500 Fe

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Elektronische Bauelemente 2N7000 0.2A , 60V , RDS(ON) 5 N-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies h

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Isc N-Channel MOSFET Transistor INCHANGE Semiconductor 2N7000 ·FEATURES ·With TO-92 package ·Low input capacitance and gate charge ·Low gate input r

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