7N60F Datasheet | Specifications & PDF Download

www.DataSheet.co.kr SVD7N60T/SVD7N60F 7A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD7N60T/F is an N-channel enhancement mode power MOS field effec

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600V N-Channel MOSFET GENERAL DESCRIPTION This Power MOSFET is produced using advanced planar stripe DMOS technology. This latest technology has been

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7N60(F,B,H) 7A mps,600 Volts N-CHANNEL MOSFET FEATURE  7A,600V,RDS(ON)=1.2Ω@VGS=10V/3.5A  Low gate charge  Low Ciss  Fast switching  100% aval

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MOSFET – N-Channel, SUPERFET), FRFET) 600 V, 47 A, 73 mW FCH47N60F Description SUPERFET MOSFET is ON Semiconductor’s first generation of high voltage

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SVF7N60F/S/D_Datasheet 7A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N60F/S/D is an N-channel enhancement mode power MOS field effect transistor

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FCA47N60F 600V N-Channel MOSFET, FRFET SuperFET FCA47N60F 600V N-Channel MOSFET, FRFET Features • 650V @TJ = 150°C • Typ. RDS(on) = 0.062Ω • Fast Rec

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Shenzhen Jingdao Electronic Co.,Ltd. TEL：0755-29799516 FAX：0755-29799515 Http://www.jdsemi.cn CM7N60F N VDMOS * ： ◆ 、 * ： ◆ , ◆ ◆100% * ： ◆

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Silan Microelectronics SVSP7N60F(FJD)(D)D2_Datasheet 7A, 600V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION 2 SVSP7N60F(FJD)(D)D2 is an N-chann

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Silicon N-Channel Power MOSFET CS7N60F A9R ○R General Description： CS7N60F A9R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-

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FCH47N60F 600V N-Channel MOSFET May 2006 SuperFET FCH47N60F 600V N-Channel MOSFET Features • 650V @TJ = 150°C • Typ. RDS(on) = 0.062Ω • Fast Recover

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MOSFET – N-Channel, 600 V, 47 A, 75 mW FCH47N60F-F085 Description SUPERFET® is ON Semiconductor’s proprietary new generation of high voltage MOSFETs u

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Silan Microelectronics SVSP7N60F(FJD)(D)D2_Datasheet 7A, 600V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION 2 SVSP7N60F(FJD)(D)D2 is an N-chann

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JCS7N60F-R-F-N-B-VB JCS7N60F-R-F-N-B-VB Datasheet /$IBOOFM
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%4 Power MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 25

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Silan Microelectronics SVSP7N60F(FJD)(D)D2_Datasheet 7A, 600V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION 2 SVSP7N60F(FJD)(D)D2 is an N-chann

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ICE7N60FP ICE7N60FP N-Channel Enhancement Mode MOSFET Features • Low rDS(on) • Ultra Low Gate Charge • High dv/dt capability • High Unclamped Inducti

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isc N-Channel MOSFET Transistor AOTF7N60FD FEATURES ·Drain Current –ID= 7.0A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On

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ICE7N60FP N-Channel Enhancement Mode MOSFET ID V(BR)DSS rDS(ON) Qg Product Summary TA = 25°C ID = 250uA VGS = 10V VDS = 480V 7A 600V 0.52Ω 21nC F

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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. :HSP200204 Issued Date : 1998.01.06 Revised Date : 2002.03.26 Page No. : 1/3 HSA733SP PNP EPITAXIAL PL

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SVS7N60F(FJ)(D)D2_Datasheet 7A, 600V DP MOS POWER TRANSISTOR DESCRIPTION SVS7N60F(FJ)(D)D2 is an N-channel enhancement mode high voltage power MOSFE

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Silan Microelectronics SVSP7N60F(FJD)(D)D2_Datasheet 7A, 600V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION 2 SVSP7N60F(FJD)(D)D2 is an N-chann

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