7N60F Datasheet | Specifications & PDF Download

Silan Microelectronics SVSP7N60F(FJD)(D)D2_Datasheet 7A, 600V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION 2 SVSP7N60F(FJD)(D)D2 is an N-chann

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SVF7N60F/S/D_Datasheet 7A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N60F/S/D is an N-channel enhancement mode power MOS field effect transistor

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Silicon N-Channel Power MOSFET CS7N60F A9HDY ○R General Description： CS7N60F A9HDY, the silicon N-channel Enhanced VDMOSFETs, is obtained by the s

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Huajing Discrete Devices Silicon N-Channel Power MOSFET ○R CS7N60FA9HD General Description： CS7N60FA9HD, the silicon N-channel Enhanced VDMOSFETs,

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Shenzhen Jingdao Electronic Co.,Ltd. TEL：0755-29799516 FAX：0755-29799515 Http://www.jdsemi.cn CM7N60F N VDMOS * ： ◆ 、 * ： ◆ , ◆ ◆100% * ： ◆

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QM07N60F 1 2011-04-29 - 1 - N-Ch 600V Fast Switching MOSFETs General Description The QM07N60F is the highest performance N-ch MOSFETs with extre

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Silan Microelectronics SVSP7N60F(FJD)(D)D2_Datasheet 7A, 600V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION 2 SVSP7N60F(FJD)(D)D2 is an N-chann

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N R N-CHANNEL MOSFET JCS7N60 MAIN CHARACTERISTICS Package ID 7.0 A VDSS 600 V Rdson（@Vgs=10V） 1.2 Ω Qg 54 nC    LED APPLICATIO

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JCS7N60F-R-F-N-B-VB JCS7N60F-R-F-N-B-VB Datasheet /$IBOOFM
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%4 Power MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 25

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Silicon N-Channel Power MOSFET CS7N60F A9R ○R General Description： CS7N60F A9R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-

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www.DataSheet.co.kr SVD7N60T/SVD7N60F 7A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD7N60T/F is an N-channel enhancement mode power MOS field effec

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Preliminary Data Sheet ICE17N60FP ICE17N60FP N-Channel Enhancement Mode MOSFET Features • Low rDS(on) • Ultra Low Gate Charge • High dv/dt capability

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SVS7N60F(FJ)(D)D2_Datasheet 7A, 600V DP MOS POWER TRANSISTOR DESCRIPTION SVS7N60F(FJ)(D)D2 is an N-channel enhancement mode high voltage power MOSFE

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isc N-Channel MOSFET Transistor AOTF7N60FD FEATURES ·Drain Current –ID= 7.0A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On

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MOSFET – N-Channel, 600 V, 47 A, 75 mW FCH47N60F-F085 Description SUPERFET® is ON Semiconductor’s proprietary new generation of high voltage MOSFETs u

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MOSFET – N-Channel, SUPERFET), FRFET) 600 V, 47 A, 73 mW FCH47N60F Description SUPERFET MOSFET is ON Semiconductor’s first generation of high voltage

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JCS7N60F /$IBOOFM
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%4 Power MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max. at 25 °C (Ω) Qg max. (nC) Qgs (nC) Qgd (n

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WNM07N60/WNM07N60F 600V N-Channel MOSFET Description The WNM07N60/WNM07N60F is N-Channel enhancement MOS Field Effect Transistor. Uses advanced high v

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CYStech Electronics Corp. Spec. No. : C409FP Issued Date : 2008.09.02 Revised Date : 2009.04.20 Page No. : 1/9 N-Channel Enhancement Mode Power MOSF

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FCA47N60F 600V N-Channel MOSFET, FRFET SuperFET FCA47N60F 600V N-Channel MOSFET, FRFET Features • 650V @TJ = 150°C • Typ. RDS(on) = 0.062Ω • Fast Rec

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