Pm25LD020 (Chingis Technology)
512Kbit/1 Mbit / 2 Mbit Single Operating Voltage Serial Flash Memory
512Kbit/1 Mbit / 2 Mbit Single Operating Voltage Serial Flash Memory With 100 MHz Dual-Output SPI Bus Interface
Pm25LD512/010/ 020
FEATURES
• Single
(38 views)
GD25Q16 (GigaDevice)
16Mbit Dual and Quad SPI Flash
25Q16BSIG
FEATURES
◆ 16M-bit Serial Flash -2048K-byte -256 bytes per programmable page
◆ Standard, Dual, Quad SPI -Standard SPI: SCLK, CS#, SI, SO, W
(33 views)
GD25Q80 (GigaDevice)
8Mbit Dual and Quad SPI Flash
Uniform Sector 8Mbit Dual and Quad SPI Flash
FEATURES
◆
GD25Q80
Speed
8M-bit Serial Flash -1024K-byte -256 bytes per programmable page Standard, Dua
(29 views)
Pm25LD010 (Chingis Technology)
512Kbit/1 Mbit / 2 Mbit Single Operating Voltage Serial Flash Memory
512Kbit/1 Mbit / 2 Mbit Single Operating Voltage Serial Flash Memory With 100 MHz Dual-Output SPI Bus Interface
Pm25LD512/010/ 020
FEATURES
• Single
(26 views)
27C4002 (STMicroelectronics)
4 Mbit 256Kb x16 UV EPROM and OTP EPROM
M27C4002
4 Mbit (256Kb x16) UV EPROM and OTP EPROM
5V ± 10% SUPPLY VOLTAGE in READ OPERATION FAST ACCESS TIME: 45ns LOW POWER CONSUMPTION: – Active Cu
(23 views)
HCPL-2631 (Fairchild Semiconductor)
HIGH SPEED-10 MBit/s LOGIC GATE OPTOCOUPLERS
HIGH SPEED-10 MBit/s LOGIC GATE OPTOCOUPLERS
SINGLE-CHANNEL 6N137 HCPL-2601 HCPL-2611
DESCRIPTION
The 6N137, HCPL-2601/2611 single-channel and HCPL-26
(20 views)
K4S281632B (Samsung semiconductor)
128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
K4S281632B
CMOS SDRAM
128Mbit SDRAM
2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
Revision 0.0 Aug. 1999
* Samsung Electronics reserves the right to
(18 views)
27C1001 (STMicroelectronics)
1 Mbit 128Kb x8 UV EPROM and OTP EPROM
M27C1001
1 Mbit (128Kb x8) UV EPROM and OTP EPROM
s
5V ± 10% SUPPLY VOLTAGE in READ OPERATION ACCESS TIME: 35ns LOW POWER CONSUMPTION: – Active Curre
(18 views)
HY57V641620FTP (Hynix)
Synchronous DRAM Memory 64Mbit
64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O Document Title
4Bank x 1M x 16bits Synchronous DRAM
Revision History
Revision No. 0.1 History Initi
(17 views)
M25P80 (STMicroelectronics)
8 Mbit/ Low Voltage/ Serial Flash Memory With 25 MHz SPI Bus Interface
M25P80
8 Mbit, Low Voltage, Serial Flash Memory With 25 MHz SPI Bus Interface
PRELIMINARY DATA
FEATURES SUMMARY s 8 Mbit of Flash Memory
s
Figure 1.
(16 views)
HYB25D512160BE (Infineon)
512Mbit Double Data Rate SDRAM
Data Sheet, Rev. 1.2, June 2004
HYB25D512[40/80/16]0B[C/T] HYB25D512[40/80/16]0B[E/F]
512Mbit Double Data Rate SDRAM DDR SDRAM
Memory Products
Never s
(16 views)
27C800 (STMicroelectronics)
8 Mbit 1Mb x8 or 512Kb x16 UV EPROM and OTP EPROM
M27C800
8 Mbit (1Mb x8 or 512Kb x16) UV EPROM and OTP EPROM
s
5V ± 10% SUPPLY VOLTAGE in READ OPERATION ACCESS TIME: 50ns BYTE-WIDE or WORD-WIDE CONF
(16 views)
29F040 (STMicroelectronics)
4 Mbit 512Kb x8 / Uniform Block Single Supply Flash Memory
M29F040
4 Mbit (512Kb x8, Uniform Block) Single Supply Flash Memory
NOT FOR NEW DESIGN
M29F040 is replaced by the M29F040B 5V ± 10% SUPPLY VOLTAGE fo
(16 views)
CY62128EV30 (Cypress Semiconductor)
1-Mbit (128K x 8) Static RAM
CY62128EV30 MoBL®
1-Mbit (128K × 8) Static RAM
1-Mbit (128K × 8) Static RAM
Features
■ Very high speed: 45 ns
■ Temperature ranges: ❐ Industrial: –40
(16 views)
K4S281632C-TP75 (Samsung semiconductor)
128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
K4S281632C-TI(P)
CMOS SDRAM
128Mbit SDRAM
2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
Revision 0.1 June 2001
* Samsung Electronics reserves the ri
(15 views)
Pm25LD512 (Chingis Technology)
512Kbit/1 Mbit / 2 Mbit Single Operating Voltage Serial Flash Memory
512Kbit/1 Mbit / 2 Mbit Single Operating Voltage Serial Flash Memory With 100 MHz Dual-Output SPI Bus Interface
Pm25LD512/010/ 020
FEATURES
• Single
(15 views)
M25P16 (STMicroelectronics)
16-Mbit Low Voltage Serial Flash Memory
M25P16
16 Mbit, Low Voltage, Serial Flash Memory With 50 MHz SPI Bus Interface
FEATURES SUMMARY
■ ■ ■ ■ ■ ■ ■ ■ ■
■ ■
16Mbit of Flash Memory Page Pr
(14 views)
HY29LV320BF-12I (Hynix Semiconductor)
32 Mbit (2M x 16) Low Voltage Flash Memory
HY29LV320
32 Mbit (2M x 16) Low Voltage Flash Memory
KEY FEATURES
n Single Power Supply Operation
– Read, program and erase operations from 2.7 to 3.
(14 views)
K4R571669D (Samsung semiconductor)
256/288Mbit RDRAM(D-die)
K4R571669D/K4R881869D
Direct RDRAM™
256/288Mbit RDRAM(D-die)
512K x 16/18bit x 32s banks Direct RDRAMTM
Version 1.4 July 2002
Page -1
Version 1.
(14 views)
27C4001 (STMicroelectronics)
4 Mbit 512Kb x 8 UV EPROM and OTP EPROM
M27C4001
4 Mbit (512Kb x 8) UV EPROM and OTP EPROM
s
5V ± 10% SUPPLY VOLTAGE in READ OPERATION FAST ACCESS TIME: 35ns LOW POWER CONSUMPTION: – Active
(14 views)