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K7N403601A K7N401801A www.DataSheet4U.com 128Kx36 & 256Kx18 Pipelined NtRAMTM Document Title 128Kx36 & 256Kx18-Bit Pipelined NtRAM TM Revision Hist

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M29F200BT M29F200BB 2 Mbit (256Kb x8 or 128Kb x16, Boot Block) Single Supply Flash Memory PRELIMINARY DATA s SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM

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LH532600 FEATURES • 262,144 words × 8 bit organization (Byte mode) 131,072 words × 16 bit organization (Word mode) • Access time: 100 ns (MAX.) • Stat

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Features • • • • Single-voltage Read/Write Operation: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV) Fast Read Access Time – 70 ns Internal Erase/Program Contro

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A67L83161/A67L83181/ A67L73321/A67L73361 Series 256K X 16/18, 128K X 32/36 Preliminary Document Title 256K X 16/18, 128K X 32/36 LVTTL, Flow-through D

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information 128KB/256KB Secondary Cache Module With Tag, Valid, and Dirty for i486 Processor Systems Thi

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K7N403609B K7N401809B www.DataSheet4U.com 128Kx36 & 256Kx18 Pipelined NtRAMTM Document Title 128Kx36 & 256Kx18-Bit Pipelined NtRAMTM Revision Histo

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www.DataSheet4U.com MX29F200T/B 2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY FEATURES • • • • 5.0V±10% for read, erase and write operation 131072x16/262

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www.DataSheet4U.com MX29F200C T/B 2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY FEATURES • • • • • 5.0V±10% for read, erase and write operation 131072x16

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K7P403623B K7P401823B Document Title 128Kx36 & 256Kx18 Synchronous Pipelined SRAM 128Kx36 & 256Kx18 SRAM Revision History Rev. No. Rev. 0.0 Rev. 0.1

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BSI „ FEATURES Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable „ DESCRIPTION BS616LV2020 • Very low operation voltage : 2.7 ~

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BSI „ FEATURES Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable „ DESCRIPTION BS616LV2021 • Very low operation voltage : 2.4 ~

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BSI „ FEATURES Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable „ DESCRIPTION BS616LV2025 • Very low operation voltage : 4.5 ~

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BSI „ FEATURES Ultra Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable „ DESCRIPTION BS616UV2021 • Ultra low operation voltage : 1.8

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Features • Single-voltage Read/Write Operation: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV) • Fast Read Access Time – 70 ns • Internal Erase/Program Control

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FUJITSU SEMICONDUCTOR DATA SHEET DS05-20865-3E FLASH MEMORY CMOS 2M (256K × 8/128K × 16) BIT MBM29LV200TC-70/-90/-12/MBM29LV200BC-70/-90/-12 s FEA

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A65H73361/A65H83181 Series Preliminary Document Title 128K x 36 & 256K x 18 Late Write Synchronous Fast SRAM with Pipelined Data Output 128K x 36 &

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A65H73361/A65H83181 Series Preliminary Document Title 128K x 36 & 256K x 18 Late Write Synchronous Fast SRAM with Pipelined Data Output 128K x 36 &

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A67L8316/A67L8318/ A67L7332/A67L7336 Series 256K X 16/18, 128K X 32/36 Preliminary Document Title 256K X 16/18, 128K X 32/36 LVTTL, Pipelined DBA SRAM

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