9N50 Datasheet | Specifications & PDF Download

MDF9N50 N-channel MOSFET 500V MDF9N50 N-Channel MOSFET 500V, 9.0 A, 0.85Ω General Description The MDF9N50 uses advanced Magnachip’s MOSFET Technolog

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N R N-CHANNEL MOSFET JCS9N50F MAIN CHARACTERISTICS Package ID VDSS Rdson-max （@Vgs=10V） Qg-typ    UPS 8A 500 V 0.8 Ω 59 nC APPLICATIO

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9N50 UNISONIC TECHNOLOGIES CO., LTD Preliminary 9A, 500V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 9N50 is an N-channel mode power MOSFET using

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 9N50 ·DESCRIPTION ·Drain Current ID= 9A@ TC=25℃ ·Drain Source Volta

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ITA0 9N50A N-Channel MOSFET Applications: • Adaptor • Charger • SMPS Standby Power Features: • RoHS Compliant • Low ON Resistance • Low Gate Charge •

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ITP09N 50A N-Channel MOSFET Applications: • Adaptor • Charger • SMPS Standby Power Features: • RoHS Compliant • Low ON Resistance • Low Gate Charge •

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CYStech Electronics Corp. Spec. No. : C720FP Issued Date : 2009.10.01 Revised Date : 2014.11.06 Page No. : 1/ 9 N-Channel Enhancement Mode Power MOS

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Advanced Power Electronics Corp. AP09N50P-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement Fast Switching Speed RoHS-compliant,

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isc N-Channel MOSFET Transistor AOTF9N50 FEATURES ·Drain Current –ID= 9.0A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-R

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B&H KOREA

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GPT09N50 GPT09N50D POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination  Robust High V

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N R N-CHANNEL MOSFET JCS9N50C MAIN CHARACTERISTICS Package ID VDSS Rdson-max （@Vgs=10V） Qg-typ    UPS 9A 500 V 0.75 Ω 29 nC APPLICATI

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AOT9N50/AOTF9N50 500V, 9A N-Channel MOSFET General Description Product Summary The AOT9N50 & AOTF9N50 have been fabricated using an advanced high v

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AOD9N50/AOI9N50 500V,9A N-Channel MOSFET General Description Product Summary The AOD9N50 & AOI9N50 have been fabricated using an advanced high volt

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AOD9N50/AOI9N50 500V,9A N-Channel MOSFET General Description Product Summary The AOD9N50 & AOI9N50 have been fabricated using an advanced high volt

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isc N-Channel MOSFET Transistor AOT9N50 FEATURES ·Drain Current –ID= 9.0A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Re

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A Product Line of Diodes Incorporated ZXTD09N50DE6 50V DUAL NPN LOW SATURATION SWITCHING TRANSISTOR IN SOT26 Features  BVCEO > 50V  IC = 1A High Co

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