A1235 Datasheet | Specifications & PDF Download

〈SMALL-SIGNAL TRANSISTOR〉 DESCRIPTION 2SA1235 is a mini package resin sealed silicon PNP epitaxial transistor, It is designed for low frequency voltag

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SA1235A TRANSISTOR (PNP) SOT–23 FEATURES  Low Collector

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Ordering number : EN873G LA1235 Monolithic Linear IC FM IF System Applications Overview The LA1235 is a high integrated IC developed for use in hig

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XP131A1235SR Power MOSFET ETR1102_001 ■GENERAL DESCRIPTION The XP131A1235SR is an N-channel Power MOSFET with low on-state resistance and ultra high

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RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(PNP) 2SA1235A FEATURES * Power dissipation PCM : 0.2 W(Tamb=2

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XP133A1235SR Power MOSFET ETR1112_001 ■GENERAL DESCRIPTION The XP133A1235SR is an N-channel Power MOSFET with low on-state resistance and ultra high

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UNISONIC TECHNOLOGIES CO., LTD ULA1235 Preliminary LINEAR INTEGRATED CIRCUIT FM IF SYSTEM APPLICATIONS  DESCRIPTION The UTC ULA1235 is a high in

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〈SMALL-SIGNAL TRANSISTOR〉 DESCRIPTION 2SA1235 is a mini package resin sealed silicon PNP epitaxial transistor, It is designed for low frequency voltag

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Transys Electronics L I M I T E D SOT-23-3L Plastic-Encapsulated Transistors 2SA1235A FEATURES Power dissipation PCM : 0.2 W (Tamb=25℃) TRANSISTOR (

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< SMALL-SIGNAL TRANSISTOR > 2SA1235A 2SA1602A 2SA1993 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE(Super mini type) FEATURE ・ S

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SMD Type TransistIoCrs PNP Transistors 2SA1235-HF Features Small collector to emitter saturation voltage. Excelent lineary DC forward current gain.

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GTVA123501FA Thermally-Enhanced High Power RF GaN on SiC HEMT 350 W, 50 V, 1200 – 1400 MHz Description The GTVA123501FA is a 350-watt GaN on SiC high

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Production specification Silicon Epitaxial Planar Transistor FEATURES  Small collector to emitter saturation voltage VCE(sat)=-0.3V max(@IC=-100mA,

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〈SMALL-SIGNAL TRANSISTOR〉 ISA1235AC1 ISA1602AM1 www.DataSheet4U.com FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION IS

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PTVA123501EC PTVA123501FC Thermally-Enhanced High Power RF LDMOS FETs 350 W, 50 V, 1200 – 1400 MHz Description The PTVA123501EC and PTVA123501FC LDM

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Elektronische Bauelemente 2SA1235A -0.2A , -60V PNP Silicon Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies haloge

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MMBTSA1235 PNP Silicon Epitaxial Planar Transistor for low frequency amplification applications The transistor is subdivided into two groups E and F,

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PTVA123501EC PTVA123501FC Thermally-Enhanced High Power RF LDMOS FETs 350 W, 50 V, 1200 – 1400 MHz Description The PTVA123501EC and PTVA123501FC LDM

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