DIGITRON SEMICONDUCTORS A180 SERIES MAXIMUM RATING.
Infineon
IAUA180N08S5N026 - Automotive MOSFET
IAUA180N08S5N026 Automotive MOSFET OptiMOS™-5 Power-Transistor Features • OptiMOS™ power MOSFET for automotive applications • N-channel – Enhancement.
IXYS Corporation
IXTP180N055T - (IXTP180N055T / IXTA180N055T / IXTQ180N055T) Trench Gate Power MOSFET
Advance Technical Information Trench Gate Power MOSFET N-Channel Enhancement Mode IXTQ 180N055T IXTA 180N055T IXTP 180N055T VDSS ID25 RDS(on) = 55.
Infineon Technologies
IPA180N10N3G - Power-Transistor
IPA180N10N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistanc.
Digitron
A180N - HIGH POWER RECTIFIER
DIGITRON SEMICONDUCTORS A180 SERIES MAXIMUM RATINGS Rating RMS forward current Average forward current One cycle surge current I t for fusing, times ≥.
IXYS Corporation
IXTA180N085T - Power MOSFET
Preliminary Technical Information TrenchMVTM Power MOSFET IXTA180N085T IXTP180N085T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(o.
IXYS Corporation
IXTQ180N055T - (IXTP180N055T / IXTA180N055T / IXTQ180N055T) Trench Gate Power MOSFET
Advance Technical Information Trench Gate Power MOSFET N-Channel Enhancement Mode IXTQ 180N055T IXTA 180N055T IXTP 180N055T VDSS ID25 RDS(on) = 55.
Fairchild Semiconductor
FGA180N33AT - 180A PDP Trench IGBT
FGA180N33AT 330V, 180A PDP Trench IGBT April 2008 FGA180N33AT 330V, 180A PDP Trench IGBT Features • High Current Capability • Low saturation voltage.
IXYS Corporation
IXTA180N10T7 - Power MOSFET
PreliminaryTechnical Information TrenchMVTM IXTA180N10T7 Power MOSFET N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 100 180.
ON Semiconductor
NDBA180N10B - Power MOSFET
NDBA180N10B Power MOSFET 100V, 2.8mΩ, 180A, N-Channel www.onsemi.com Features • Ultra Low On-Resistance • Low Gate Charge • High Speed Switching • 1.
INCHANGE
IPA180N10N3 - N-Channel MOSFET
isc N-Channel MOSFET Transistor IPA180N10N3,IIPA180N10N3 ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤18mΩ (max) ·Enhancement mode ·Fast Switc.
Infineon
IPA180N10N3 - Power-Transistor
IPA180N10N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistanc.
INCHANGE
IXTA180N10T - N-Channel MOSFET
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 6.4mΩ@VGS=10V ·Fully characterized avalanche voltage and curr.
Infineon
IAUA180N04S5N012 - Automotive MOSFET
IAUA180N04S5N012 Automotive MOSFET OptiMOS™ 5 Power-Transistor Features • OptiMOS™ power MOSFET for automotive applications • N-channel – Enhancement.
IXYS Corporation
IXTA180N055T - (IXTP180N055T / IXTA180N055T / IXTQ180N055T) Trench Gate Power MOSFET
Advance Technical Information Trench Gate Power MOSFET N-Channel Enhancement Mode IXTQ 180N055T IXTA 180N055T IXTP 180N055T VDSS ID25 RDS(on) = 55.
Fairchild Semiconductor
FGA180N30D - 300V PDP IGBT
www.DataSheet4U.com FGA180N30D 300V PDP IGBT June 2006 FGA180N30D 300V PDP IGBT Features • High Current Capability • Low saturation voltage: VCE(sa.
IXYS Corporation
IXFA180N10T2 - Power MOSFET
TrenchT2TM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFA180N10T2 IXFP180N10T2 Symbol VDSS VDGR VG.
IXYS Corporation
IXTA180N085T7 - Power MOSFET
TrenchMVTM Power MOSFET IXTA180N085T7 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier VDSS = ID25 = RDS(on) ≤ 85V 180A 5.5mΩ .
IXYS Corporation
IXTA180N10T - Power MOSFET
TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA180N10T IXTP180N10T VDSS = 100V ID25 = 180A RDS(on) ≤ 6.4mΩ TO-263 (IXTA) Sy.
Vishay
VS-HFA180NH40PbF - Ultrafast Soft Recovery Diode
www.vishay.com VS-HFA180NH40PbF Vishay Semiconductors HEXFRED® Ultrafast Soft Recovery Diode, 180 A HALF-PAK (D-67) Lug terminal anode Base cathod.