Dual-pushbutton switch A8N Dual-Pushbutton Switc.
Samsung
CL10A106MA8NRNC - Multi-layer Ceramic Capacitor
SPECIFICATION (Reference sheet) · Supplier : Samsung electro-mechanics · Product : Multi-layer Ceramic Capacitor · Samsung P/N : · Description : CL.
Fairchild Semiconductor
FQA8N80 - 800V N-Channel MOSFET
FQA8N80 March 2001 QFET FQA8N80 800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produc.
Fairchild Semiconductor
FQA8N90C - 900V N-Channel MOSFET
FQA8N90C QFET FQA8N90C 900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using F.
IXYS
IXTA8N65X2 - Power MOSFET
Preliminary Technical Information X2-Class Power MOSFET N-Channel Enhancement Mode IXTY8N65X2 IXTA8N65X2 IXTP8N65X2 VDSS = ID25 = RDS(on) 650V 8A.
IXYS
IXTA8N50P - PolarHV Power MOSFET
www.DataSheet4U.com PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA 8N50P IXTP 8N50P VDSS ID25 RDS(on) = 500 = 8 ≤ 0.8 V .
Coilcraft
AE235RAA8N7_SZ - Outgassing Compliant Chip Inductors
0402 CHIP INDUCTORS OutgassingCompliantChipInductors AE235RAA ■ Exceptionally high Q factors ■ Outstanding self-resonant frequency ■ Tight inducta.
INCHANGE
IXTA8N65X2 - N-Channel MOSFET
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) ≤500mΩ@VGS= 10V ·Fast.
TOKO Inc
LLQ1608-A8N7 - Chip Inductors
P R O V I S I O N A L Žb ’è Chip Inductors ƒ`ƒbƒvƒCƒ“ƒ_ƒNƒ^ DIMENSIONS / Š O Œ ` • ¡ – @ • } 1.12 max. 0.33 1.02 max. Recommended PCB Pattern •„•.
Fairchild Semiconductor
FQA8N80C_F109 - MOSFET
FQA8N80C_F109 800V N-Channel MOSFET FQA8N80C_F109 800V N-Channel MOSFET Features • 8.4A, 800V, RDS(on) = 1.55Ω @VGS = 10 V • Low gate charge ( typica.
Omron
A8N - Dual-pushbutton switch
Dual-pushbutton switch A8N Dual-Pushbutton Switch for High Capacity Switching • Miniature size with High current 16A switching. • Easy to mount by s.
IXYS
IXFA8N65X2 - Power MOSFET
X2-Class HiPERFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXFY8N65X2 IXFA8N65X2 IXFP8N65X2 D G S Symbol VDSS VDGR VGSS VGSM ID25 IDM.
Samsung
CL10B104KA8NNNC - Multilayer Ceramic Capacitor
SPECIFICATION (Reference sheet) · Supplier : Samsung electro-mechanics · Product : Multi-layer Ceramic Capacitor · Samsung P/N: · Description : CL1.
IXYS
IXYA8N90C3D1 - IGBT
900V XPTTM IGBT GenX3TM w/ Diode High-Speed IGBT for 20-50 kHz Switching IXYA8N90C3D1 IXYP8N90C3D1 Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM I.
IXYS Corporation
IXGA8N100 - IGBT
IGBT Preliminary data sheet IXGA 8N100 IXGP 8N100 VCES = 1000 V = 16 A IC25 VCE(sat) = 2.7 V Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) .
Fairchild Semiconductor
FQA8N80C - 800V N-Channel MOSFET
FQA8N80C 800V N-Channel MOSFET September 2006 QFET FQA8N80C 800V N-Channel MOSFET Features • • • • • • 8.4A, 800V, RDS(on) = 1.55Ω @VGS = 10 V Low g.
Coilcraft
AE235RAA8N2_SZ - Outgassing Compliant Chip Inductors
0402 CHIP INDUCTORS OutgassingCompliantChipInductors AE235RAA ■ Exceptionally high Q factors ■ Outstanding self-resonant frequency ■ Tight inducta.
Fairchild Semiconductor
FQA8N90C_F109 - N-Channel QFET MOSFET
FQA8N90C_F109 — N-Channel QFET® MOSFET FQA8N90C_F109 N-Channel QFET® MOSFET 900 V, 8 A, 1.9 Ω Features • 8 A, 900 V, RDS(on) = 1.9 Ω (Max.) @ VGS = 1.
INCHANGE
FQA8N100C - N-Channel MOSFET
isc N-Channel MOSFET Transistor INCHANGE Semiconductor FQA8N100C ·FEATURES ·With TO-3PN packaging ·High speed switching ·Standard level gate drive ·.
IXYS
IXFA8N85XHV - Power MOSFET
PreliminaryTechnical Information X-Class HiPERFET Power MOSFET N-Channel Enhancement Mode IXFA8N85XHV IXFP8N85X IXFQ8N85X VDSS = ID25 = RDS(on) .
INCHANGE
IXFA8N85XHV - N-Channel MOSFET
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS ≥ 850V ·Static Drain-Source On-Resistance : RDS(on) ≤ 850mΩ@VGS= 10V ·Fast Sw.
