A8N Datasheet | Specifications & PDF Download

High Voltage XPTTM IGBT Advance Technical Information IXYA8N250CHV IXYH8N250CHV VCES = 2500V IC110 = 8A V CE(sat)  4.0V tfi(typ) = 86ns S

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SPECIFICATION (Reference sheet) · Supplier : Samsung electro-mechanics · Product : Multi-layer Ceramic Capacitor · Samsung P/N : · Description : CL

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SPECIFICATION (Reference sheet) · Supplier : Samsung electro-mechanics · Product : Multi-layer Ceramic Capacitor · Samsung P/N: · Description : CL1

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FQA8N80 March 2001 QFET FQA8N80 800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produc

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FQA8N80C 800V N-Channel MOSFET September 2006 QFET FQA8N80C 800V N-Channel MOSFET Features • • • • • • 8.4A, 800V, RDS(on) = 1.55Ω @VGS = 10 V Low g

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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS ≥ 850V ·Static Drain-Source On-Resistance : RDS(on) ≤ 850mΩ@VGS= 10V ·Fast Sw

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FQA8N100C — N-Channel QFET® MOSFET FQA8N100C N-Channel QFET® MOSFET 1000 V, 8 A, 1.45 Ω Features • RDS(on) = 1.45 Ω (Max.) @ VGS = 10 V, ID = 4 A • L

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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) ≤500mΩ@VGS= 10V ·Fast

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900V XPTTM IGBT GenX3TM w/ Diode High-Speed IGBT for 20-50 kHz Switching IXYA8N90C3D1 IXYP8N90C3D1 Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM I

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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 0.8Ω@VGS=10V ·Fully characterized avalanche voltage and curre

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Preliminary Technical Information X2-Class Power MOSFET N-Channel Enhancement Mode IXTY8N65X2 IXTA8N65X2 IXTP8N65X2 VDSS = ID25 = RDS(on) 650V 8A

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www.DataSheet4U.com PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA 8N50P IXTP 8N50P VDSS ID25 RDS(on) = 500 = 8 ≤ 0.8 V

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isc N-Channel MOSFET Transistor IXFA8N65X2 ·FEATURES ·Drain Source Voltage- : VDSS= 650V(Min) ·Static drain-source on-resistance: RDS(on) ≤ 450mΩ@VG

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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS ≥ 700V ·Static Drain-Source On-Resistance : RDS(on) ≤ 500mΩ@VGS= 10V ·Fast Sw

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FQA8N90C QFET FQA8N90C 900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using F

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Dual-pushbutton switch A8N Dual-Pushbutton Switch for High Capacity Switching • Miniature size with High current 16A switching. • Easy to mount by s

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IGBT Preliminary data sheet IXGA 8N100 IXGP 8N100 VCES = 1000 V = 16 A IC25 VCE(sat) = 2.7 V Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA)

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0402 CHIP INDUCTORS OutgassingCompliantChipInductors AE235RAA ■ Exceptionally high Q factors ■ Outstanding self-resonant frequency ■ Tight inducta

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PreliminaryTechnical Information X-Class HiPERFET Power MOSFET N-Channel Enhancement Mode IXFA8N85XHV IXFP8N85X IXFQ8N85X VDSS = ID25 =  RDS(on)

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Preliminary Technical Information X2-Class Power MOSFET N-Channel Enhancement Mode IXTU8N70X2 IXTY8N70X2 IXTA8N70X2 IXTP8N70X2 VDSS = ID25 =  RDS(

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