IXTA8N50P Datasheet - IXYS

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IXTA8N50P PolarHV Power MOSFET

www.DataSheet4U.com PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA 8N50P IXTP 8N50P VDSS ID25 RDS(on) = 500 = 8 ≤ 0.8 V .

IXTA8N50P_IXYS.pdf

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Datasheet Details

Part number:

IXTA8N50P

Manufacturer:

IXYS

File Size:

249.54 KB

Description:

PolarHV Power MOSFET

Features

* l l l Symbol Test Conditions (TJ = 25° C unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 100µA VGS = ±30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125° C Characteristic Values Min. Typ. Max. 500 3.0 5.5 ±100 5 50 0.8 V V nA µA µA Ω International st

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IXTA8N50P PolarHV Power MOSFET IXYS

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