IXTA80N12T2 Datasheet - IXYS

IXTA80N12T2 Power MOSFET

TrenchT2TM Power MOSFETs IXTA80N12T2 IXTP80N12T2 VDSS = 120V ID25 = 80A RDS(on)  17m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-263AA (IXTA) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C TC = 25C Maximum Lead Temperature for Soldering Plastic Body for 10s Mounting Torque (TO-22.

IXTA80N12T2 Features

* International Standard Packages

* 175°C Operating Temperature

* Avalanche Rated

* Low RDS(on)

* Fast Intrinsic Rectifier

* High Current Handling Capability Advantages

* Easy to Mount

* Space Savings

* High Power Density Applications

* Synchronous Rectificati

IXTA80N12T2-IXYS.pdf

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Datasheet Details

Part number:

IXTA80N12T2

Manufacturer:

IXYS

File Size:

205.19 KB

Description:

Power mosfet.

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