IXTA80N10T Datasheet - IXYS

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IXTA80N10T Power MOSFET

TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXTA80N10T IXTP80N10T VDSS ID25 RDS(on) = = ≤ 100V 80A 14m.

IXTA80N10T-IXYS.pdf

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Datasheet Details

Part number:

IXTA80N10T

Manufacturer:

IXYS

File Size:

202.10 KB

Description:

Power MOSFET

Features

* z z 1.6mm (0.062 in. ) from Case for 10s Plastic Body for 10s Mounting Torque (TO-220) TO-263 TO-220 300 260 1.13 / 10 2.5 3.0 International Standard Packages 175°C Operating Temperature z Avalanche Rated z High Current Handling Capability z Fast Intrinsic Diode z Low RDS(on) Advantages z z z Eas

Applications

* z z z VGS = 10V, ID = 25A, Note 1 & 2 14 mΩ z z z Automotive - Motor Drives - DC/DC Conversion - 42V Power Bus - ABS Systems DC/DC Converters and Off-Line UPS Primary Switch for 24V and 48V Systems High Current Switching Applications Distributed Power Architechtures and VRMs Electronic Valve T

IXTA80N10T Distributors

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IXTA80N10T Power MOSFET IXYS

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