* °C Ultra-low On Resistance °C Unclamped Inductive Switching (UIS) rated °C Low package inductance °C - easy to drive and to protect g 175 °C Operating Temperature Advantages Easy to mount Space savings High power density Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS =
IXTA80N10T7 Datasheet (157.92 KB)
IXTA80N10T7
IXYS Corporation
157.92 KB
Power mosfet.
Preliminary Technical Information
TrenchMVTM Power MOSFET
IXTA80N10T7
N-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 =
RDS(on) ≤
100 80 1.
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