Preliminary Technical Information TrenchMVTM Power MOSFET IXTA80N10T7 N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 100 80 14 V A mΩ Symbol VDSS VDGR VGSM ID25 IDM IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 175°C, RG = 15 Ω TC = 25°C 1.6 mm (0.062 in.) from case for 10 s Plastic b
IXTA80N10T7-IXYSCorporation.pdf
Datasheet Details
Part number:
IXTA80N10T7
Manufacturer:
IXYS Corporation
File Size:
157.92 KB
Description:
Power mosfet.