IXTA80N10T7 - Power MOSFET

IXYS Corporation

Datasheet Details

°C Ultra-low On Resistance °C Unclamped Inductive Switching (UIS) rated °C Low package inductance °C - easy to drive and to protect g 175 °C Operating Temperature Advantages Easy to mount Space savings High power density Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS = 0 V, ID = 250 μA VGS(th) VDS = VGS, ID = 100 μA IGSS VGS = ± 20 V, VDS = 0 V IDSS VDS = VDSS VGS = 0 V TJ = 150°C RDS(on) VGS = 10 V, ID = 25 A, Note 1 Characteristic Values Min. Typ. Max. 10.

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Published: Feb 13, 2015 |