IXTA88N085T Datasheet - IXYS Corporation

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IXTA88N085T Power MOSFET

Preliminary Technical Information TrenchMVTM Power MOSFET IXTA88N085T IXTP88N085T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on).

IXTA88N085T-IXYSCorporation.pdf

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Datasheet Details

Part number:

IXTA88N085T

Manufacturer:

IXYS Corporation

File Size:

207.78 KB

Description:

Power MOSFET

Features

* Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 ° C Operating Temperature Symbol Test Conditions (TJ = 25° C unless otherwise specified) BVDSS VGS = 0 V, ID = 250 µA VGS(th) VDS = VGS, ID = 100 µA IGSS VGS = ± 20 V,

Applications

* Automotive - Motor Drives - 42V Power Bus - ABS Systems DC/DC Converters and Off-line UPS Primary Switch for 24V and 48V Systems High Current Switching Applications © 2006 IXYS CORPORATION All rights reserved DS99640 (11/06) IXTA88N085T IXTP88N085T Symbol Test Conditions (TJ = 25° C unless oth

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IXTA88N085T Power MOSFET IXYS Corporation

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