Datasheet Specifications
- Part number
- IXTA88N085T7
- Manufacturer
- IXYS Corporation
- File Size
- 160.24 KB
- Datasheet
- IXTA88N085T7-IXYSCorporation.pdf
- Description
- Power MOSFET
Description
Preliminary Technical Information TrenchMVTM Power MOSFET IXTA88N085T7 N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 85 V 88.
Features
* °C Ultra-low On Resistance °C Unclamped Inductive Switching (UIS) °C rated °C °C Low package inductance - easy to drive and to protect 175 °C Operating Temperature g Advantages Easy to mount Space savings High power density Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVApplications
* Automotive - Motor Drives - 42V Power Bus - ABS Systems DC/DC Converters and Off-line UPS Primary Switch for 24V and 48V Systems High Current Switching Applications © 2006 IXYS CORPORATION All rights reserved DS99641 (11/06) IXTA88N085T7 Symbol Test Conditions (TJ = 25°C unless otherwise speciIXTA88N085T7 Distributors
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