* °C Ultra-low On Resistance °C Unclamped Inductive Switching (UIS) °C rated °C °C Low package inductance - easy to drive and to protect 175 °C Operating Temperature g Advantages Easy to mount Space savings High power density Symbol Test Conditions (TJ = 25°C unless otherwise specified) BV
IXTA88N085T7 Datasheet (160.24 KB)
IXTA88N085T7
IXYS Corporation
160.24 KB
Power mosfet.
Preliminary Technical Information TrenchMVTM Power MOSFET IXTA88N085T7 N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 85 V 88.
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