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FQA8N100C - MOSFET

Fairchild Semiconductor

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Datasheet Details

Part number	FQA8N100C
Manufacturer	Fairchild ↗ Semiconductor
File Size	1.53 MB
Description	MOSFET
Datasheet	FQA8N100C-FairchildSemiconductor.pdf

FQA8N100C Product details

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

Features

RDS(on) = 1.45 Ω (Max. ) @ VGS = 10 V, ID = 4 A.
Low Gate Charge (Typ. 53 nC).
Low Crss (Typ. 16 pF).
100% Avalanche Tested March 2014.

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Published: Jan 16, 2017 |