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FQA8N100C

MOSFET

FQA8N100C Features

* RDS(on) = 1.45 Ω (Max.) @ VGS = 10 V, ID = 4 A

* Low Gate Charge (Typ. 53 nC)

* Low Crss (Typ. 16 pF)

* 100% Avalanche Tested March 2014 Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar s

FQA8N100C General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i.

FQA8N100C Datasheet (1.53 MB)

Preview of FQA8N100C PDF

Datasheet Details

Part number:

FQA8N100C

Manufacturer:

Fairchild Semiconductor

File Size:

1.53 MB

Description:

Mosfet.

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FQA8N100C MOSFET Fairchild Semiconductor

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