FQA8N80 Datasheet - Fairchild Semiconductor

FQA8N80 800V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i.

FQA8N80 Features

* 8.4A, 800V, RDS(on) = 1.2Ω @VGS = 10 V Low gate charge ( typical 44 nC) Low Crss ( typical 20 pF) Fast switching 100% avalanche tested Improved dv/dt capability D !

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* G! G DS TO-3P FQA Series ! S Absolute Maximum

FQA8N80_FairchildSemiconductor.pdf