ATF Datasheet | Specifications & PDF Download

0 R Virtex™-II Platform FPGAs: Complete Data Sheet 0 0 DS031 August 1, 2003 Product Specification This document includes all four modules of the

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w w w .D at Networking Silicon S a . U 82562GT 10/100 Mbps Platform LAN 4 t e Connect (PLC) e h Datasheet m o c Product Features ■ ■ ■ ■ ■ ■ ■

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82562ET 10/100 Mbps Platform LAN Connect (PLC) Networking Silicon Datasheet Product Features ■ IEEE 802.3 10BASE-T/100BASE-TX compliant physical laye

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PA610ATF N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 160mΩ @VGS = 10V ID 8A TO-220F ABSOLUTE MAXIMUM RATINGS (TA =

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P2615ATFG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 150V 26mΩ @VGS = 10V ID 28A TO-220F ABSOLUTE MAXIMUM RATINGS (TA

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P8315ATF N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 150V 83mΩ @VGS = 10V ID 13.5A TO-220F ABSOLUTE MAXIMUM RATINGS (TA

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SDH Transport FLASHWAVE 4560 Multiservice Provisioning Platform The Challenge We Face Telecom carriers and network operators today are constantly loo

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P0765ATF N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 650V 1.5Ω @VGS = 10V ID 7A TO-220F ABSOLUTE MAXIMUM RATINGS (TA =

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Features • Industry-standard Architecture • 12ns Maximum Pin-to-pin Delay • Zero Power – 100µA Maximum Standby Power (Input Transition Detection) • CM

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P1615ATFA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 150V 16.5mΩ @VGS = 10V 42A TO-220F ABSOLUTE MAXIMUM RATINGS (

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For the availability of this product, please contact the sales office.

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Features • Operates between 3.0V to 5.25V • High-density, High-performance Electrically-erasable Complex Programmable Logic Device – 44-pin, 32 I/O CP

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Features • High-density, High-performance, Electrically-erasable Complex Programmable Logic Device – 256 Macrocells – 5 Product Terms per Macrocell, E

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2 – 10 GHz Medium Power Gallium Arsenide FET Technical Data ATF-46171 Features • High Output Power: 27.0␣ dBm Typical P 1dB at 4␣ GHz • High Gain at

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0.5–6 GHz Low Noise Gallium Arsenide FET Technical Data ATF-21170 Features • Low Noise Figure: 0.9 dB Typical at 4 GHz • High Associated Gain: 13.0

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Features • Industry-standard Architecture – Emulates Many 24-pin PALs® – Low-cost Easy-to-use Software Tools • High-speed Electrically-erasable Progra

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1.5 – 18 GHz Surface Mount Pseudomorphic HEMT Technical Data ATF-36163 Features • Low Minimum Noise Figure: 1 dB Typical at 12 GHz 0.6 dB Typical at

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Features • Industry-standard Architecture – Emulates Many 24-pin PALs® – Low-cost Easy-to-use Software Tools • High-speed Electrically-erasable Progra

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*The ATF16V8BQ is Replaced by ATF16V8B and ATF16V8BQL ATF16V8B, ATF16V8BQ*, and ATF16V8BQL High-performance EE PLD DATASHEET Features  Industry-stan

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P0690ATF / P0690ATFS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 900V 2.35Ω @VGS = 10V ID 6A TO-220F TO-220FS ABSOLUTE

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