ATF-46171

2-10 GHz Medium Power Gallium Arsenide FET

ATF-46171 Features

* High Output Power: 27.0␣ dBm Typical P 1dB at 4␣ GHz

* High Gain at 1 dB Compression: 11.0␣ dB Typical G 1dB at 4␣ GHz

* High Power Efficiency: 38% Typical at 4␣ GHz

* Hermetic Metal-Ceramic Stripline Package Description The ATF-46171 is a gallium arsenide Schottky-

ATF-46171 General Description

The ATF-46171 is a gallium arsenide Schottky-barrier-gate field effect transistor designed for medium power, linear amplification in the 2 to 10 GHz frequency range. This nominally 0.5␣ micron gate length GaAs FET is an interdigitated four-cell structure using airbridge interconnects between drain .

ATF-46171 Datasheet (39.00 KB)