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ATF-46171 2-10 GHz Medium Power Gallium Arsenide FET

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Description

2 * 10 GHz Medium Power Gallium Arsenide FET Technical Data ATF-46171 .
The ATF-46171 is a gallium arsenide Schottky-barrier-gate field effect transistor designed for medium power, linear amplification in the 2 to 10 GHz f.

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Datasheet Specifications

Part number
ATF-46171
Manufacturer
HP
File Size
39.00 KB
Datasheet
ATF-46171-HP.pdf
Description
2-10 GHz Medium Power Gallium Arsenide FET

Features

* High Output Power: 27.0␣ dBm Typical P 1dB at 4␣ GHz
* High Gain at 1 dB Compression: 11.0␣ dB Typical G 1dB at 4␣ GHz
* High Power Efficiency: 38% Typical at 4␣ GHz

Applications

* in space, airborne, military ground and shipboard, and commercial environments. It is supplied in a hermetic high reliability package with low parasitic reactance and minimum therma

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