ATF-45101

2-8 GHz Medium Power Gallium Arsenide FET

ATF-45101 Features

* High Output Power: 29.0␣ dBm Typical P 1dB at 4␣ GHz

* High Gain at 1dB Compression: 10.0␣ dB Typical G 1dB at 4␣ GHz

* High Power Efficiency: 38% Typical at 4␣ GHz

* Hermetic Metal-Ceramic Stripline Package Description The ATF-45101 is a gallium arsenide Schottky-b

ATF-45101 General Description

The ATF-45101 is a gallium arsenide Schottky-barrier-gate field effect transistor designed for medium power, linear amplification in the 2 to 8 GHz frequency range. This nominally 0.5 micron gate length GaAs FET is an interdigitated four-cell structure using airbridge interconnects between drain fi.

ATF-45101 Datasheet (39.73 KB)