ATF-45101 2-8 GHz Medium Power Gallium Arsenide FET

Description

2 * 8 GHz Medium Power Gallium Arsenide FET Technical Data ATF-45101 .
The ATF-45101 is a gallium arsenide Schottky-barrier-gate field effect transistor designed for medium power, linear amplification in the 2 to 8 GHz fr.

📥 Download Datasheet

ATF-45101 Datasheet Preview — Preview of ATF-45101 PDF

Datasheet Specifications

Part number: ATF-45101
Manufacturer: HP
File Size: 39.73 KB
Datasheet: ATF-45101-HP.pdf
Description: 2-8 GHz Medium Power Gallium Arsenide FET

Features

* High Output Power: 29.0␣ dBm Typical P 1dB at 4␣ GHz
* High Gain at 1dB Compression: 10.0␣ dB Typical G 1dB at 4␣ GHz
* High Power Efficiency: 38% Typical at 4␣ GHz

Applications

* in space, airborne, military ground and shipboard, and commercial environments. It is supplied in a hermetic high reliability package with low parasitic reactance and minimum thermal resistan

ATF-45101 Distributors

📁 Related Datasheet

ATF-10136 ATF-13284 ATF-21186 ATF-33143 ATF-331M4 ATF-34143

📌 All Tags

ATF-45101 2-8 GHz Medium Power Gallium Arsenide FET HP

HP ATF-45101-like datasheet