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ATF-45171

2-8 GHz Medium Power Gallium Arsenide FET

ATF-45171 Features

* High Output Power: 29.0␣ dBm Typical P 1dB at 4␣ GHz

* High Gain at 1dB Compression: 10.5 dB Typical G1 dB at 4␣ GHz

* High Power Efficiency: 38% Typical at 4␣ GHz

* Hermetic Metal-Ceramic Stripline Package Description The ATF-45171 is a gallium arsenide Schottky-ba

ATF-45171 General Description

The ATF-45171 is a gallium arsenide Schottky-barrier-gate field effect transistor designed for medium power, linear amplification in the 2 to 8 GHz frequency range. This nominally 0.5 micron gate length GaAs FET is an interdigitated four-cell structure using airbridge interconnects between drain fi.

ATF-45171 Datasheet (38.86 KB)

Preview of ATF-45171 PDF

Datasheet Details

Part number:

ATF-45171

Manufacturer:

HP

File Size:

38.86 KB

Description:

2-8 ghz medium power gallium arsenide fet.

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ATF-45171 2-8 GHz Medium Power Gallium Arsenide FET HP

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