ATF-45171 2-8 GHz Medium Power Gallium Arsenide FET

Description

2 * 8 GHz Medium Power Gallium Arsenide FET Technical Data ATF-45171 .
The ATF-45171 is a gallium arsenide Schottky-barrier-gate field effect transistor designed for medium power, linear amplification in the 2 to 8 GHz fr.

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Datasheet Specifications

Part number: ATF-45171
Manufacturer: HP
File Size: 38.86 KB
Datasheet: ATF-45171-HP.pdf
Description: 2-8 GHz Medium Power Gallium Arsenide FET

Features

* High Output Power: 29.0␣ dBm Typical P 1dB at 4␣ GHz
* High Gain at 1dB Compression: 10.5 dB Typical G1 dB at 4␣ GHz
* High Power Efficiency: 38% Typical at 4␣ GHz

Applications

* in space, airborne, military ground and shipboard, and commercial environments. It is supplied in a hermetic high reliability package with low parasitic reactance and minimum thermal resistance.

ATF-45171 Distributors

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ATF-45171 2-8 GHz Medium Power Gallium Arsenide FET HP

HP ATF-45171-like datasheet