ATF-44101 2-8 GHz Medium Power Gallium Arsenide FET

Description

2 * 8 GHz Medium Power Gallium Arsenide FET Technical Data ATF-44101 .
The ATF-44101 is a gallium arsenide Schottky-barrier-gate field effect transistor designed for medium power, linear amplification in the 2 to 8 GHz fr.

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Datasheet Specifications

Part number: ATF-44101
Manufacturer: HP
File Size: 60.06 KB
Datasheet: ATF-44101-HP.pdf
Description: 2-8 GHz Medium Power Gallium Arsenide FET

Features

* High Output Power: 32.0␣ dBm Typical P 1dB at 4␣ ␣ GHz
* High Gain at 1 dB Compression: 8.5␣ dB Typical G 1dB at 4␣ GHz
* High Power Efficiency: 35% Typical at 4␣ GHz

Applications

* in space, airborne, military ground and shipboard, and commercial environments. It is supplied in a hermetic high reliability package with low parasitic reactance and mi

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ATF-44101 2-8 GHz Medium Power Gallium Arsenide FET HP

HP ATF-44101-like datasheet