ATF-44101

2-8 GHz Medium Power Gallium Arsenide FET

ATF-44101 Features

* High Output Power: 32.0␣ dBm Typical P 1dB at 4␣ ␣ GHz

* High Gain at 1 dB Compression: 8.5␣ dB Typical G 1dB at 4␣ GHz

* High Power Efficiency: 35% Typical at 4␣ GHz

* Hermetic Metal-Ceramic Stripline Package Description The ATF-44101 is a gallium arsenide Schottky

ATF-44101 General Description

The ATF-44101 is a gallium arsenide Schottky-barrier-gate field effect transistor designed for medium power, linear amplification in the 2 to 8 GHz frequency range. This nominally .5␣ micron gate length GaAs FET is an interdigitated four-cell structure using airbridge interconnects between source f.

ATF-44101 Datasheet (60.06 KB)