ATF-21170 Datasheet, Fet, HP

ATF-21170 Features

  • Fet
  • Low Noise Figure: 0.9 dB Typical at 4 GHz
  • High Associated Gain: 13.0 dB Typical at 4 GHz
  • High Output Power: 23.0 dBm Typical P1 dB at 4 GHz
  • Herme

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Part number:

ATF-21170

Manufacturer:

HP

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37.85kb

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📄 Datasheet

Description:

0.5-6 ghz low noise gallium arsenide fet. The ATF-21170 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor housed in a hermetic, high reliabi

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Page 2 of ATF-21170 Page 3 of ATF-21170

ATF-21170 Application

  • Applications in the 0.5-6 GHz frequency range. This GaAs FET device has a nominal 0.3 micron gate length with a total gate periphery of 750 microns.

TAGS

ATF-21170
0.5-6
GHz
Low
Noise
Gallium
Arsenide
FET
HP

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