ATF-21170 - 0.5-6 GHz Low Noise Gallium Arsenide FET
The ATF-21170 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor housed in a hermetic, high reliability package.
This device is designed for use in low noise or medium power amplifier applications in the 0.5-6 GHz frequency range.
This GaAs FET device has a nominal
