ATF-21170
HP
37.85kb
0.5-6 ghz low noise gallium arsenide fet. The ATF-21170 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor housed in a hermetic, high reliabi
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ATF-21186 - 0.5-6 GHz General Purpose Gallium Arsenide FET
(Agilent)
0.5 – 6 GHz General Purpose Gallium Arsenide FET
Technical Data
ATF-21186
GAIN (dB)
211
Features
• Low Noise Figure: 0.5 dB Typ. @ 2 GHz
• High Out.
ATF-25170 - 0.5-10 GHz Low Noise Gallium Arsenide FET
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0.5 – 10 GHz Low Noise Gallium Arsenide FET
Technical Data
ATF-25170
Features
• Low Noise Figure: 0.8 dB Typical at 4 GHz
• High Associated Gain: 14.
ATF-25570 - 0.5-10 GHz General Purpose Gallium Arsenide FET
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0.5 – 10 GHz General Purpose Gallium Arsenide FET
Technical Data
ATF-25570
Features
• High Output Power: 20.5 dBm Typical P1 dB at 4 GHz
• Low Noise.
ATF-25735 - 0.5-10 GHz General Purpose Gallium Arsenide FET
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0.5–10 GHz General Purpose Gallium Arsenide FET
Technical Data
ATF-25735
Features
• High Output Power: 19.0␣ Bm Typical P 1dB at 4␣ GHz
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ATF-26150 - Gallium Arsenide FET
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ATF-26836 - 2-16 GHz General Purpose Gallium Arsenide FET
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2 – 16 GHz General Purpose Gallium Arsenide FET
Technical Data
ATF-26836
Features
• High Output Power: 18.0␣ dBm Typical P 1dB at 12␣ GHz
• High Gai.
ATF-26884 - 2-16 GHz General Purpose Gallium Arsenide FET
(HP)
2 – 16 GHz General Purpose Gallium Arsenide FET
Technical Data
ATF-26884
Features
• High Output Power: 18.0␣ dBm Typical P 1dB at 12␣ GHz
• High Gai.
ATF-10100 - 0.5-12 GHz Low Noise Gallium Arsenide FET
(HP)
0.5 – 12 GHz Low Noise Gallium Arsenide FET
Technical Data
ATF-10100
Features
• Low Noise Figure: 0.5 dB Typical at 4 GHz
• Low Bias: VDS =2V,IDS␣ =.
ATF-10136 - 0.5-12 GHz Low Noise Gallium Arsenide FET
(Agilent)
0.5 – 12 GHz Low Noise Gallium Arsenide FET
Technical Data
ATF-10136
Features
• Low Noise Figure: 0.5 dB Typical at 4 GHz
• Low Bias: VDS = 2 V, IDS.
ATF-10236 - 0.5-12 GHz Low Noise Gallium Arsenide FET
(HP)
0.5 – 12 GHz Low Noise Gallium Arsenide FET
Technical Data
ATF-10236
Features
• Low Noise Figure: 0.8␣ dB Typical at 4␣ GHz
• Low Bias: VDS= 2 V, ID.