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ATF-21170 Datasheet - HP

ATF-21170 0.5-6 GHz Low Noise Gallium Arsenide FET

The ATF-21170 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor housed in a hermetic, high reliability package. This device is designed for use in low noise or medium power amplifier applications in the 0.5-6 GHz frequency range. This GaAs FET device has a nominal .

ATF-21170 Datasheet (37.85 KB)

Preview of ATF-21170 PDF

Datasheet Details

Part number:

ATF-21170

Manufacturer:

HP

File Size:

37.85 KB

Description:

0.5-6 ghz low noise gallium arsenide fet.

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ATF-21170 0.5-6 GHz Low Noise Gallium Arsenide FET HP

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