ATF-25570 - 0.5-10 GHz General Purpose Gallium Arsenide FET

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Datasheet Details

Part number: ATF-25570
Manufacturer: HP
File Size: 34.79 KB
Datasheet: ATF-25570-HP.pdf
Description: 0.5-10 GHz General Purpose Gallium Arsenide FET

ATF-25570 Product details

Description

The ATF-25570 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor housed in a hermetic, high reliabil- ity package.This device is designed for use in general purpose amplifier and oscillator applications in the 0.5-10 GHz frequency range.This GaAs FET device has a nominal 0.3 micron gate length using airbridge interconnects between drain fingers.Total gate periphery is 500 microns.Proven gold based metallization systems and nitride passivation assure a rugged

Features

High Output Power: 20.5 dBm Typical P1 dB at 4 GHz.
Low Noise Figure: 1.0 dB Typical at 4 GHz.
High Associated Gain: 14.0 dB Typical at 4 GHz.
Hermetic Gold-Ceramic Microstrip Package.

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