ATF-25170 - 0.5-10 GHz Low Noise Gallium Arsenide FET

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Datasheet Details

Part number: ATF-25170
Manufacturer: HP
File Size: 35.11 KB
Datasheet: ATF-25170-HP.pdf
Description: 0.5-10 GHz Low Noise Gallium Arsenide FET

ATF-25170 Product details

Description

The ATF-25170 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor housed in a hermetic, high reliability package.Its noise figure makes this device appropriate for use in low noise amplifiers operating in the 0.5-10 GHz frequency range.This GaAs FET device has a nominal 0.3 micron gate length using airbridge interconnects between drain fingers.Total gate periphery is 500 microns.Proven gold based metallization systems and nitride passivation assure a rugged,

Features

Low Noise Figure: 0.8 dB Typical at 4 GHz.
High Associated Gain: 14.0 dB Typical at 4 GHz.
High Output Power: 21.0 dBm Typical P1 dB at 4 GHz.
Hermetic Gold-Ceramic Microstrip Package.

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