ATF-25735 - 0.5-10 GHz General Purpose Gallium Arsenide FET

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Datasheet Details

Part number: ATF-25735
Manufacturer: HP
File Size: 41.33 KB
Datasheet: ATF-25735-HP.pdf
Description: 0.5-10 GHz General Purpose Gallium Arsenide FET

ATF-25735 Product details

Description

The ATF-25735 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor housed in a cost effective microstrip package.This device is designed for use in general purpose amplifier and oscillator applications in the 0.5-10 GHz frequency range.This GaAs FET device has a nominal 0.3 micron gate length using airbridge interconnects between drain fingers.Total gate periphery is 500 microns.Proven gold based metallization systems and nitride passivation assure a rugged, r

Features

High Output Power: 19.0␣ Bm Typical P 1dB at 4␣ GHz.
High Gain: 12.5␣ dB Typical G 1 dB at 4 GHz.
Low Noise Figure: 1.2 dB Typical at 4 GHz.
Cost Effective Ceramic Microstrip Package.

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